Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

Sugie, Ryuichi; Mitani, Takeshi; Yoshikawa, Masanobu; Iwata, Yoshiharu; Satoh, Ryohei

doi:10.1143/jjap.49.04dp15

Cited by 9 publications

(5 citation statements)

References 31 publications

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“…CL spectra were analyzed by using scanning electron microscope (SEM) with single monochromator and TnGaAs multi-channel detector [3]. All CL measurements were performed at 30K.…”

Section: Methodsmentioning

confidence: 99%

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Sagara

Hiraiwa

Uedono

et al. 2012

2012 12th International Workshop on Junction Technology

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Residual damage in 'low-dose' implanted and 'high-temperature' annealed Si have not been studied well due to lack of characterization technique and awareness of its risk for device degradation. Tn this study, we detected and characterized residual damage, which is existed in low-dose (1013cm-2 ) As implanted Si after high-temperature (I 100°C) RT A in N2 and O 2 mixed atmosphere. The characterization techniques we selected were CL and PAS methods. It was succeeded to reveal the existence of residual damage and identify its damage as a kind of vacancy-type of defects. Moreover, it was clear that residual damage wastransformed to be the other type of defect by combined with oxygen. The details of defects and their variation during annealing will be discussed in this paper.

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“…CL spectra were analyzed by using scanning electron microscope (SEM) with single monochromator and TnGaAs multi-channel detector [3]. All CL measurements were performed at 30K.…”

Section: Methodsmentioning

confidence: 99%

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Sagara

Hiraiwa

Uedono

et al. 2012

2012 12th International Workshop on Junction Technology

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“…All CL measurements were performed at 30K. The details of CL measurement system is described elsewhere [2].…”

Section: Methodsmentioning

confidence: 99%

Luminescence Studies of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-Temperature Annealing

Sagara¹,

Hiraiwa

Shibata

et al. 2011

AIP Conference Proceedings

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In order to prevent the degradation of device performance, it is necessary to detect and reduce residual damage remaining after ion implantation and annealing. In this study, we focused on the high-temperature annealing process after low-dose arsenic (As) implantation in silicon (Si) and evaluated the correlation of annealing conditions and damage by cathodoluminescence (CL) compared to Secondary Ion Mass Spectrometry (SIMS) and Junction PhotoVoltage (JPV) results. Increasing the annealing temperature with the high-heat-up rate, As profile and the sheet resistance didn't change. However, the intensity of the band-to-band transition increased with temperature. This implies the some kind of residual damage remains after low-temperature annealing and it is removed with increasing annealing temperature. On the other hand, with increasing the annealing time at 1200°C, more As was piled-up at the SiO 2 /Si interface and the luminescence intensity decreased. We guess this piled-up As is inactive and it may create some kind of damage combined with the defects around the interface, and these damage types cause the suppression of the luminescence intensity. We concluded that the luminescence intensity reflects the various kinds of damage and optical characterization methods have a potential to evaluate defect evolution in annealing process.

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“…In particular, CL is suitable for device characterization since it has high spatial resolution and sensitivity. [13][14][15][16][17] In this study, we carried out cross-sectional CL measurements for SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) and investigated the residual defects mainly caused by ion implantation in the source region.…”

Section: Introductionmentioning

confidence: 99%

Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence

Sugie

Uchida

Kosaka

et al. 2016

Jpn. J. Appl. Phys.

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Cross-sectional cathodoluminescence (CL) and scanning capacitance microscopy (SCM) measurements were carried out for silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) to investigate process-induced defects. The DI defect-related line at 426 nm and a broad luminescence at approximately around 430–470 nm, which were produced by ion implantation, were observed in addition to the near-band-edge emission. CL images showed that the densities of nonradiative recombination and DI centers were high near the source region. Moreover, DI centers existed even in the n-drift region located 10 µm from the surface. These results indicate that many types of defects diffuse and interact with each other during annealing even in the area where dopant atoms are not implanted. The annealing process not only activates dopant atoms but also induces the diffusion of unstable native defects and transforms their structure into more thermally stable defects such as DI centers.

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Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

Abstract: PACS. 96.40Pq -Extensive air showers.Abstract. -We study sequences of times between successive arrivals of air showers detected in the EAS-TOP experiment (primary energy between 70 and 1000 TeV) in order to establish their nature, whether stochastic or chaotic.

Cited by 9 publications

References 31 publications

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Detection and characterization of residual damage in low-dose arsenic implanted silicon after high-temperature annealing

Luminescence Studies of Residual Damage in Low-Dose Arsenic Implanted Silicon after High-Temperature Annealing

Characterization of process-induced defects in SiC MOSFETs by cross-sectional cathodoluminescence

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