2007
DOI: 10.1063/1.2460297
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Cathodoluminescence and room temperature ferromagnetism of Mn-doped ZnO nanorod arrays grown by chemical vapor deposition

Abstract: Articles you may be interested inStrong room-temperature ferromagnetism of high-quality lightly Mn-doped ZnO grown by molecular beam epitaxy

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Cited by 75 publications
(33 citation statements)
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“…The UV luminescence consists of two peaks, one centered at 376 nm and the other located at 383 nm. These bands are very similar to those observed in the PL spectrum of pure ZnO, which are usually attributed to the band-edge emission originating from the recombination of free excitions [20,43]. The spacing between the two emission peaks is 60.4 meV, which may be caused by the splitting of the free exciton [46].…”
Section: Resultssupporting
confidence: 77%
See 1 more Smart Citation
“…The UV luminescence consists of two peaks, one centered at 376 nm and the other located at 383 nm. These bands are very similar to those observed in the PL spectrum of pure ZnO, which are usually attributed to the band-edge emission originating from the recombination of free excitions [20,43]. The spacing between the two emission peaks is 60.4 meV, which may be caused by the splitting of the free exciton [46].…”
Section: Resultssupporting
confidence: 77%
“…7(a). The relatively strong green band centered at 503 nm may originate from the electronic transitions from the shallow donor level of oxygen vacancies and zinc interstitials to the valence band [20]. Another possibility is the d-d transition and pair excitation of Fe(Ⅲ) in ZnFe 2 O 4 [47].…”
Section: Resultsmentioning
confidence: 99%
“…In addition to these theoretical studies, several experimental groups have reported that the intrinsic defects play crucial roles in the ferromagnetism of TM-doped ZnO. For example, Yan et al pointed out that oxygen vacancies play an important role in the appearance of room temperature ferromagnetism for Mn-doped ZnO nanorods [46]. Liu et al [32] indicated that point defects such as Zn i or V Zn are responsible for ferromagnetism in Cr:ZnO samples and Hong et al [47] have pointed out that the magnetization in their Cr:ZnO films is related to oxygen vacancies (V o ).…”
Section: Resultsmentioning
confidence: 99%
“…However, there is still no consensus on the origin of ferromagnetism in Mndoped ZnO though In the course of preparing samples, it is unavoidable that some defects are introduced, such as oxygen vacancies, zinc vacancies, hydrogen contamination. Previous researches [12,13] reported that oxygen vacancies may play an important role in inducing ferromagnetism in Mn-doped ZnO. However, Iuşan et al [14] and Wang et al [15] reported that neutral oxygen vacancies can't turn the antiferromagnetic (AFM) state to the ferromagnetic (FM) state in Mn-doped ZnO from first-principles calculations, but they didn't elaborate on the microscopic mechanism specifically.…”
Section: Introductionmentioning
confidence: 94%