Cathodoluminescence and photoluminescence study of trap centers in amorphous silicon oxynitride

Gritsenko, V. A.; Shavalgin, Yu.G.; Pundur, P.A.; Wong, Hei; Lau, Woon‐Ming

doi:10.1109/icmel.2000.840567

Cited by 1 publication

(1 citation statement)

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“…Depending on the emission wavelength, multiple luminescence centers have been reported in SiO 2 films. Luminescent emission at 460 nm (2.7 eV), 520 nm (2.4 eV) and 650 nm (1.9 eV) nm are mainly related to defects such as oxygen deficiency-related centers (ODC) or oxygen vacancies [39][40][41], E'δ defect or peroxide radical [42] and non-bridging oxygen hole centers (NBOHC) [40,41,43], respectively. Since CL and PL measurements have shown luminescent peaks (or distributions) close to those wavelengths, such defects could be inside the SRO films.…”

Section: Electro-optical Characteristicsmentioning

confidence: 99%

Silicon-Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition to Develop Silicon Light Sources

Alarcón-Salazar¹,

López-Estopíer²,

Quiroga‐González³

et al. 2016

Chemical Vapor Deposition - Recent Advances and Applications in Optical, Solar Cells and Solid State Devices

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Off stoichiometric silicon oxide, also known as silicon-rich oxide (SRO), is a lightemitting material that is compatible with silicon technology; therefore, it is a good candidate to be used as a light source in all-silicon optoelectronic circuits. The SRO obtained by low-pressure chemical vapor deposition (LPCVD) has shown the best luminescent properties compared to other techniques. In spite of LPCVD being a simple technique, it is not a simple task to obtain SRO with exact silicon excess in a reliable and repetitive way. In this work, the expertise obtained in our group to obtain SRO by LPCVD with precise variation is presented. Also, the characteristics of this SRO obtained in our group are revised and discussed. It is demonstrated that LPCVD is an excellent technique to obtain single layers and multilayers of nanometric single layers with good characteristics.

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