Cathodic electrochemical deposition of CuI from room temperature ionic liquid-based electrolytes

Kosta, Ivet; Azaceta, Eneko; Yate, Luis; Cabañero, Germán; Grande, Hans‐Jürgen; Tena‐Zaera, Ramón

doi:10.1016/j.elecom.2015.06.016

Cited by 13 publications

(7 citation statements)

References 22 publications

(30 reference statements)

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“…Figure A depicts CV analysis of an unstirred solution of 20 mM CuSO 4 , 20 mM EDTA, and 20 mM KI with a Au working electrode. Upon the cathodic scan, we observed two reduction peaks, C1 and C2, as previously reported . The cathodic reduction peak C1 is attributed to the reduction of Cu(II) to Cu(I) at the working electrode surface to form CuI in the presence of I – in the solution as given in eqs and .…”

Section: Resultssupporting

confidence: 76%

“…It exhibits p-type conductivity because of Cu vacancies . Due to the large room-temperature exciton binding energy (62 meV), a high hole mobility (43.9 cm 2 V –1 s –1 ), and a large band gap (3.1 eV), CuI has been shown to be a promising candidate in optoelectronic and flexible devices. − CuI deposited by ultrahigh vacuum techniques or solution processes yielded mostly polycrystalline films. − Thin films of CuI have been electrochemically deposited previously but had a fiber texture with no in-plane order. , Recently, the heteroepitaxial growth of γ-CuI was achieved on sapphire and silicon using DC sputtering and molecular beam epitaxy to prepare thin films of epitaxial CuI. ,, There is a pressing need for a simple solution method to produce highly ordered wide band gap hole conductors.…”

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confidence: 99%

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Epitaxial Electrodeposition of Optically Transparent Hole-Conducting CuI on n-Si(111)

et al. 2021

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The expansion of future optoelectronic materials into transparent flexible electronics, perovskite, organic, and tandem photovoltaics depends on the development of high-performance p-type materials with optical transparency. We introduce the epitaxial growth of γ-CuI, a wide band gap p-type semiconductor with the zinc blende structure, on single crystalline Si(111) using a simple, cost-effective, room-temperature electrochemical method. The deposited epitaxial film grows with a high degree of in-plane and out-of-plane order, templated by the Si(111) substrate. A deposition mechanism is proposed, in which epitaxial CuI seed crystals are nucleated on the freshly etched n-Si(111) surface, followed by the simultaneous oxidation of Si to form a thin layer of SiO x and the lateral overgrowth of the CuI seeds into a continuous film. The rectifying p-CuI/SiO x /n-Si heterojunction diode shows an ideality factor of 1.5, a built-in voltage of 0.67 V, and a barrier height of 0.91 eV. The epitaxial CuI film has been epitaxially lifted off by chemical etching to produce textured CuI foils with an out-of-plane and in-plane order that mimics that of single crystals.

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Section: Resultssupporting

confidence: 76%

mentioning

confidence: 99%

Epitaxial Electrodeposition of Optically Transparent Hole-Conducting CuI on n-Si(111)

et al. 2021

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“…Recently, there is a renewed interest in CuI thin films due to their attractive prospects for heterojunction optoelectronic device applications [ 6 , 7 , 8 ], which has led to a large number of studies of CuI thin films, including growth methods, quality of epitaxial thin films, optical and electrical properties, and device applications [ 9 , 10 , 11 , 12 , 13 , 14 , 15 ]. However, in spite of these previous efforts and results, some of the basic properties, such as the defect behavior and the process of carrier recombination in CuI films, still remain unclear.…”

Section: Introductionmentioning

confidence: 99%

“…Different synthesis techniques can be used to prepare CuI thin films [ 2 , 11 , 12 , 13 , 14 , 15 , 16 ], such as pulse laser deposition, magnetron sputtering, iodination reaction, vacuum evaporation, and hydrothermal evaporation. Among them, the iodination reaction technique using a copper thin film has attracted enormous attention because of the potential for large area uniform films, low growth temperature, and inexpensive cost [ 6 ].…”

Section: Introductionmentioning

confidence: 99%

Luminescence Properties and Mechanisms of CuI Thin Films Fabricated by Vapor Iodization of Copper Films

Lin

Zhao

et al. 2016

Materials

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Copper iodide (CuI) thin films were grown on Si(100) substrates using a copper film iodination reaction method. It was found that γ-CuI films have a uniform and dense microstructure with (111)-orientation. Transmission spectra indicated that CuI thin films have an average transmittance of about 60% in the visible range and the optical band gap is 3.01 eV. By checking the effect of the thickness of the Cu films and annealing condition on the photoluminescence (PL) character of CuI films, the luminescence mechanisms of CuI have been comprehensively analyzed, and the origin of different PL emissions are proposed with Cu vacancy and iodine vacancy as defect levels.

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“…Copper iodide has been prepared by several techniques such as electrochemical deposition [10], reactive sputtering [11], and wet chemical synthesis [12]. It is one of interesting material which can be easily synthesized by electro exploding wire technique [13].…”

Section: Introductionmentioning

confidence: 99%

Electrical Properties of Copper Iodine Prepared by Exploding Wire

Abdullah¹,

Salman²,

Humud³

2019

Karbala International Journal of Modern Science

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Copper iodide (CuI) is one of the promising materials for use in many applications such as organic electronic devices. In this work, CuI nanoparticles were prepared using the exploding wire technique in an iodine solution and were deposited as thin films by a spin coating method to study its electrical properties. This study showed that all prepared thin films were a poly-crystalline structure with γ phase. The electrical study showed that al film was p-type. The dielectric parameters depended on frequency and voltage. It can be noticed a small increase in ac conductivity by increasing the applied voltages in the lower range, but there is a noticeable increase in conductivity at 1 volt.

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Cathodic electrochemical deposition of CuI from room temperature ionic liquid-based electrolytes

Cited by 13 publications

References 22 publications

Epitaxial Electrodeposition of Optically Transparent Hole-Conducting CuI on n-Si(111)

Epitaxial Electrodeposition of Optically Transparent Hole-Conducting CuI on n-Si(111)

Luminescence Properties and Mechanisms of CuI Thin Films Fabricated by Vapor Iodization of Copper Films

Electrical Properties of Copper Iodine Prepared by Exploding Wire

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