Cathodic Arc Sources

Anders, André

doi:10.1007/978-0-387-79108-1_5

Cited by 11 publications

(13 citation statements)

References 39 publications

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“…However, it should be noted that the ion energy distributions have an inherent high energy tail, up to hundreds of eV [23]. The average ion charge state in pulsed arc plasma follows the same trend, from Ti (2,03) and Si (1,39) to C (1,00) [1]. The kinetic energy gain across the potential difference between plasma and substrate (here biased to -30 V) is proportional to the individual charge state of the ion.…”

Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 86%

“…The kinetic energy gain across the potential difference between plasma and substrate (here biased to -30 V) is proportional to the individual charge state of the ion. The present study was conducted with dc-arc, but the ion charge states are assumed to follow a similar trend as previously reported [1]. Arc plasmas have been shown to exhibit significant self sputtering at substrate bias less than -50 V, as well as in absence of a bias [24].…”

Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 97%

“…As a minor amount of Ar was present during synthesis, potential re-sputtering of Ti, Si, and C through bombardment of Ti, Si, C or Ar is evaluated. Ti in arc plasmas is reported to have higher average kinetic energy (58,9 eV) compared to Si (34,5 eV) and C (18,7 eV) [1]. However, it should be noted that the ion energy distributions have an inherent high energy tail, up to hundreds of eV [23].…”

Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 99%

“…Since they spread preferentially at high angles [1,18], the amount reaching the film may be somewhat higher at increasing angles from the cathode surface normal. If the macroparticles are assumed to have the cathode composition originating from the (presumed coherently) molten cathode material, these would be richer in Si and C than the overall coating.…”

Section: Angular Dependence Of the Plasma Compositionmentioning

confidence: 99%

“…Cathodic arc is a powerful technique for thin film synthesis, where the plasma originates from so called cathode spots of very high current, power, and plasma density [1]. The resulting energetic and highly ionized plasma can be used for rapid growth of stable as well as metastable compounds, hence frequently used for tribological, decorative, protective, and functional coatings.…”

Section: Introductionmentioning

confidence: 99%

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Layer formation by resputtering in Ti–Si–C hard coatings during large scale cathodic arc deposition

Eriksson

Zhu

Ghafoor

et al. 2011

Surface and Coatings Technology

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This paper presents the physical mechanism behind the phenomenon of self-layering in thin films made by industrial scale cathodic arc deposition systems using compound Ti-Si-C cathodes and rotating substrate fixture. For the as-deposited films, electron microscopy and energy dispersive X-ray spectrometry reveals a trapezoid modulation in Si content in the substrate normal direction, with a period of 4 to 23 nm dependent on cathode configuration. This is caused by preferential resputtering of Si by the energetic deposition flux incident at high incidence angles, when the substrates are facing away from the cathodes. The Ti-rich sub-layers exhibit TiC grains with sizes up to 5 nm, while layers with high Si-content are less crystalline. The nanoindentation hardness of the films increases with decreasing layer thickness.

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Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 86%

Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 97%

Section: Ion Surface Interaction and Preferential Resputteringmentioning

confidence: 99%

Section: Angular Dependence Of the Plasma Compositionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Layer formation by resputtering in Ti–Si–C hard coatings during large scale cathodic arc deposition

Eriksson

Zhu

Ghafoor

et al. 2011

Surface and Coatings Technology

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Impact of Annealing on the Conductivity of Amorphous Carbon Films Incorporating Copper and Gold Nanoparticles Deposited by Pulsed Dual Cathodic Arc

Endrino

Horwat

Anders

et al. 2009

Plasma Processes & Polymers

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The influence of annealing in argon at 300 °C on the conductivity, phase stability and electronic structure of hydrogen‐free amorphous carbon (a‐C) films containing copper (a‐C:Cu) and gold (a‐C:Au) nanoclusters was investigated. The motivation of this work is twofold: (1) to study the thermal stability of a‐C:Cu and a‐C:Au films and (2) to point out the relevance of X‐ray absorption near edge structure (XANES) technique to study the structural evolution of metal‐doped a‐C nanocomposites. The films were produced at room temperature using a selective‐bias pulsed dual‐cathode arc deposition technique. Compositional analysis was performed with secondary neutral mass spectroscopy whereas grazing incidence X‐ray diffraction (GIXRD) was used to monitor phase transformation and identify the dispersion or agglomeration of the crystallites within the carbon matrix. XANES spectra at the C‐K was used to investigate the effect of annealing in argon on the electronic structure of the a‐C matrix, while Cu K and Au L‐edges were investigated on a‐C:Cu and a‐C:Au samples, respectively, to study the nanocluster evolution. XANES showed that the a‐C host matrix increased its graphitic character and that stress was relieved upon annealing. No relevant changes were observed in the Au arrangements in a‐C:Au films. In the case of the a‐C:Cu samples, the Cu‐K XANES spectra indicated the formation of Cu2O crystals which correlated well with GIXRD spectra and the decrease in conductivity.

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Thermal runaway of metal nano-tips during intense electron emission

Kyritsakis

Veske

Eimre

et al. 2018

J. Phys. D: Appl. Phys.

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When an electron emitting tip is subjected to very high electric fields, plasma forms even under ultra high vacuum conditions. This phenomenon, known as vacuum arc, causes catastrophic surface modifications and constitutes a major limiting factor not only for modern electron sources, but also for many large-scale applications such as particle accelerators, fusion reactors etc. Although vacuum arcs have been studied thoroughly, the physical mechanisms that lead from intense electron emission to plasma ignition are still unclear. In this article, we give insights to the atomic scale processes taking place in metal nanotips under intense field emission conditions. We use multi-scale atomistic simulations that concurrently include field-induced forces, electron emission with finitesize and space-charge effects, Nottingham and Joule heating. We find that when a sufficiently high electric field is applied to the tip, the emission-generated heat partially melts it and the field-induced force elongates and sharpens it. This initiates a positive feedback thermal runaway process, which eventually causes evaporation of large fractions of the tip. The reported mechanism can explain the origin of neutral atoms necessary to initiate plasma, a missing key process required to explain the ignition of a vacuum arc. Our simulations provide a quantitative description of in the conditions leading to runaway, which shall be valuable for both field emission applications and vacuum arc studies.arXiv:1710.00050v3 [cond-mat.mtrl-sci]

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Cathodic Arc Sources

Cited by 11 publications

References 39 publications

Layer formation by resputtering in Ti–Si–C hard coatings during large scale cathodic arc deposition

Layer formation by resputtering in Ti–Si–C hard coatings during large scale cathodic arc deposition

Impact of Annealing on the Conductivity of Amorphous Carbon Films Incorporating Copper and Gold Nanoparticles Deposited by Pulsed Dual Cathodic Arc

Thermal runaway of metal nano-tips during intense electron emission

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