Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth

Kołasiński, Kurt W.

doi:10.1016/j.cossms.2007.03.002

Cited by 268 publications

(195 citation statements)

References 76 publications

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“…Commonly, particle seeded NW growth is possible due to the Vapor-Liquid-Solid mechanism (VLS) and the actual NW synthesize/growth process is in general initiated by transforming the NPs into liquid alloy droplets during an annealing step. It has also been shown that solid NPs (Vapor-Solid-Solid, VSS) can aid the crystallization process, making the particle-seeded approach applicable to a rather wide range of growth parameters [6]. Further, Au NPs are not a prerequisite for fabricating NW structures as evident by the often used self-catalyzed method [8,9] and reports of using other foreign metal NPs [10].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, the size-dependent optical properties of these type of NPs have been shown to be promising for plasmonic nanosensor applications, reaching a detection limit on the single molecule level [3][4][5]. In materials science, metal NPs are frequently used when synthesizing semiconductor nanowires (NWs) by the particle seeded/catalyzed NW growth approach [6]. In particular, Au NPs have proven to be successful for making III-V semiconductor NWs [7] and Au NP seeded NW growth is one of the main strategies for the directional crystallization of III-V NWs.…”

Section: Introductionmentioning

confidence: 99%

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Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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Part of developing new strategies for fabrications of nanowire structures involves in many cases the aid of metal nanoparticles (NPs). It is highly beneficial if one can define both diameter and position of the initial NPs and make well-defined nanowire arrays. This sets additional requirement on the NPs with respect to being able to withstand a pre-growth annealing process (i.e. de-oxidation of the III-V semiconductor surface) in an epitaxy system.Recently, it has been demonstrated that Ag may be an alternative to using Au NPs as seeds for particle-seeded nanowire fabrication. This work brings light onto the effect of annealing of Au, Ag and Au-Ag alloy NP arrays in two commonly used epitaxial systems, the Molecular Beam Epitaxy (MBE) and the Metalorganic Vapor Phase Epitaxy (MOVPE). The NP arrays are fabricated with the aid of Electron Beam Lithography on GaAs 100 and 111B wafers and the evolution of the NPs with respect to shape, size and position on the surfaces 2 are studied after annealing using Scanning Electron Microscopy (SEM). We find that while the Au NP arrays are found to be stable when annealed up to 600 °C in a MOVPE system, a diameter and pitch dependent splitting of the particles are seen for annealing in a MBE system. The Ag NP arrays are less stable, with smaller diameters (≤ 50 nm) dissolving during annealing in both epitaxial systems. In general, the mobility of the NPs is observed to differ between the two the GaAs 100 and 111B surfaces. While the initial pattern is found be intact on the GaAs 111B surface for a particular annealing process and particle type, the increased mobility of the NP on the 100 may influence the initial pre-defined positions at higher annealing temperatures. The effect of annealing on Au-Ag alloy NP arrays suggests that these NP can withstand necessary annealing conditions for a complete de-oxidation of GaAs surfaces.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

et al. 2017

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“…25,26 In typical VLS growth, a metal droplet nucleates crystal growth and determines the nanowire diameter. Bi 2 Se 3 nanostructure growth has been demonstrated with and without seed particle involvement.…”

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confidence: 99%

Structural and Electrical Characterization of Bi₂Se₃ Nanostructures Grown by Metal–Organic Chemical Vapor Deposition

et al. 2012

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We characterize nanostructures of Bi 2 Se 3 that are grown via metalorganic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 µm long or thin micron-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ-cm. We observe weak anti-localization and extract a phase coherence length l φ = 178 nm and spin-orbit length l so = 93 nm at T = 0.29 K. Our results are consistent with previous measurements on exfoliated samples and samples grown via physical vapor deposition.

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“…Tapered pillars emerge from an interdependent, self-ordering cycle of Ga droplet (i.e., pillar cap) growth and sheath formation. The underlying mechanisms are noncatalytic and physically distinct from others reported in the literature, such as vaporliquid-solid, solid-liquid-solid, and solution-liquid-solid growth [4].…”

mentioning

confidence: 71%

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

Botman¹,

Bahm

Randolph³

et al. 2013

Phys. Rev. Lett.

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Bottom-up growth of microscopic pillars is observed at room temperature on GaN irradiated with a Ga þ beam in a gaseous XeF 2 environment. Ion bombardment produces Ga droplets which evolve into pillars, each comprised of a spherical Ga cap atop a Ga-filled, gallium fluoride tapered tube (sheath). The structures form through an interdependent, self-ordering cycle of liquid cap growth and solid sheath formation. The sheath and core growth mechanisms are not catalytic, but instead consistent with a model of ion-induced Ga and F generation, Ga transport through surface diffusion, and heterogeneous sputtering caused by self-masking of the tapered pillars.

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Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth

Cited by 268 publications

References 76 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Structural and Electrical Characterization of Bi₂Se₃ Nanostructures Grown by Metal–Organic Chemical Vapor Deposition

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

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Catalytic growth of nanowires: Vapor–liquid–solid, vapor–solid–solid, solution–liquid–solid and solid–liquid–solid growth

Cited by 268 publications

References 76 publications

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Annealing of Au, Ag and Au–Ag alloy nanoparticle arrays on GaAs (100) and (111)B

Structural and Electrical Characterization of Bi2Se3 Nanostructures Grown by Metal–Organic Chemical Vapor Deposition

Spontaneous Growth of Gallium-Filled Microcapillaries on Ion-Bombarded GaN

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Structural and Electrical Characterization of Bi₂Se₃ Nanostructures Grown by Metal–Organic Chemical Vapor Deposition