Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires

Wang, Yewu; Zhang, Lide; Liang, Changhao; Wang, Guozhong; Peng, Xinsheng

doi:10.1016/s0009-2614(02)00530-4

Cited by 291 publications

(127 citation statements)

References 21 publications

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“…The VLS model is a well established mechanism responsible for the growth of nanowires and nanotubes of various inorganic materials, e.g semiconductors, oxides. [121][122][123][124][125][126][127][128][129][130].…”

Section: Chemical Vapor Depositionmentioning

confidence: 99%

Nanocrystalline materials and coatings

Tjong

Chen

2004

Materials Science and Engineering: R: Reports

835

345

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In recent years, near-nano (submicron) and nanostructured materials have attracted increasingly more attention from the materials community. Nanocrystalline materials are characterized by a microstructural length or grain size of up to about 100 nm. Materials having grain size of $0.1 to 0.3 mm are classified as submicron materials. Nanocrystalline materials exhibit various shapes or forms, and possess unique chemical, physical or mechanical properties. When the grain size is below a critical value ($10-20 nm), more than 50 vol.% of atoms is associated with grain boundaries or interfacial boundaries. In this respect, dislocation pile-ups cannot form, and the Hall-Petch relationship for conventional coarse-grained materials is no longer valid. Therefore, grain boundaries play a major role in the deformation of nanocrystalline materials. Nanocrystalline materials exhibit creep and super plasticity at lower temperatures than conventional micro-grained counterparts. Similarly, plastic deformation of nanocrystalline coatings is considered to be associated with grain boundary sliding assisted by grain boundary diffusion or rotation. In this review paper, current developments in fabrication, microstructure, physical and mechanical properties of nanocrystalline materials and coatings will be addressed. Particular attention is paid to the properties of transition metal nitride nanocrystalline films formed by ion beam assisted deposition process. #

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Section: Chemical Vapor Depositionmentioning

confidence: 99%

Nanocrystalline materials and coatings

Tjong

Chen

2004

Materials Science and Engineering: R: Reports

835

345

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“…Wagner & Ellis (Wagner & Ellis, 1964) first reported this mechanism in the 1960s to produce micrometer-sized wires, later justified thermodynamically and kinetically by Givargizov in 1975(Givargizov, 1975. In the early twenty-first century, this mechanism is extensively explored by several research groups worldwide to prepare nanowires and NRs from a rich variety of inorganic materials (Wu & Yang, 2000;Zhang et al, 2001;Wu & Yang, 2001;Gudiksen & Lieber, 2000;Wu et al, 2002b;Duan & Lieber, 2000;Pan et al, 2001;Gao et al, 2003;Chen et al, 2001;Wang et al, 2002b). The VLS growth mechanism is practically demonstrated by Yang group (Wu & Yang, 2001) with the help of in-situ transmission electron microscopy (TEM) techniques by monitoring the VLS growth mechanism in real time.…”

Section: Vapor-liquid-solid Growth Methodsmentioning

confidence: 99%

ZnO Nanorods Arrays and Heterostructures for the High Sensitive UV Photodetection

Dhara¹,

Giri²

2012

Nanorods

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“…4 Ferrite nanoparticles have been proposed to be helpful in several biomedical applications on targeting, diagnosis and disease treatment. 5 Several techniques have been employed in the growth of 1-D nanostructures such as electrochemical deposition, 6 solvothermal, 7 homoepitaxial growth, 8 chemical vapor transport, 9 vapor liquid solid, 10,11 etc., The synthesis of 1D nanostructures by vapor liquid solid (VLS) mechanism is one of the simplest way of growth and is widely used for obtaining single crystalline 1-D nanostructures. The VLS method requires a metal liquid droplet as a catalyst, which adsorbs the gaseous species of the source material followed by the nucleation and growth of the nanowires.…”

Section: Introductionmentioning

confidence: 99%

The pronounced role of impurity phases in the optical properties of Mn catalyzed ZnS nanostructures

et al. 2015

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We report the effect of Mn self-doping in Mn catalyzed ZnS nanostructures grown via vapor liquid solid mechanism, which also resulted in the formation of additional impurity minority phases like ZnO and MnO 2 . The synthesized ZnS nanostructures were subsequently annealed in the range of 500 • C -700 • C in an inert environment to remove impurity phases and enhance the incorporation of dopant. Room temperature photoluminescence showed strong defect assisted luminescence. It was observed that green emission due to intrinsic defects of ZnS nanostructures was reduced in magnitude and Mn related orange/red luminescence increased in magnitude in nanostructures annealed at high temperature. The presence of impurity phases led to the observation of surface optical and interface phonon modes as observed in the Raman spectroscopy. Dielectric continuum and phonon confinement models were employed to determine the correlation lengths of the optical phonon modes. C 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License. [http://dx

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Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires

Cited by 291 publications

References 21 publications

Nanocrystalline materials and coatings

Nanocrystalline materials and coatings

ZnO Nanorods Arrays and Heterostructures for the High Sensitive UV Photodetection

The pronounced role of impurity phases in the optical properties of Mn catalyzed ZnS nanostructures

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