Catalyst-free direct growth of InP quantum dots on Si by MOCVD: a step toward monolithic integration

Growth and Characterization of MOCVD Grown Gallium Phosphide Nanostructures on Silicon Substrates

“…The individual particles having smaller height are not clear from Fig. 1(a) as the AFM tip could not penetrate between two closely spaced nanostructures [5]. Fig.…”

“…The size of the particles measured by FESEM is found to be less than that obtained from AFM micrograph. This inconsistency can be explained by the scan profile of the AFM tip [5]. The AFM tip actually does not follow the lateral surface of the particles.…”

“…This can induce a large dislocation density in the grown film. As a result the electronic properties of the films will degrade [5]. However, it has been found that low dimensional structures can be grown on Si with a reduced dislocation density due to the quantization of carriers [6].…”

Photovoltaic conversion of visible spectrum by GaP capped InP quantum dots grown on Si (100) by metalorganic chemical vapor deposition

“…Thus, one can think of an on-chip InP QDs/Si based heterostructures for efficient photovoltaic conversion which will be able to drive other microelectronic circuits integrated on the same chip. 11 However, batch to batch growth of multilayer InP QDs/Si with a chemical vapor deposition (CVD) system is elusive as deposition of Si by cracking silane (SiH 4 ) requires 1200 C, 12 the temperature which the QDs cannot withstand and will be smeared out. Thus, GaP, another III-V material, can be used as a capping material on InP QDs (in lieu of Si) as it has almost similar lattice constant that of Si.…”

OMVPE growth of indium phosphide nano-structures on silicon for monolithic integration

“…It is needless to mention that so far as the optoelectronics is concerned, QDs has tremendous potentials over the bulk and they are also easier to grow. Thus growth of III-V nanostructures specially QDs on Si has been practiced by various groups around the world [18][19][20][21]. Earlier Zundel et al [22] deposited InP QDs on Si substrates by MBE to fabricate LED.…”