2013
DOI: 10.1016/j.matchemphys.2012.12.012
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Catalyst free carbon nitride nanostructures prepared by rf-PECVD technique on hydrogenated amorphous carbon template

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Cited by 10 publications
(8 citation statements)
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“…Another used technique consists of the doping of the film with different elements, such as boron, fluorine and nitrogen, which has been widely used to relieve the internal stress of the film [14][15][16].The effects of the nitrogen incorporating in DLC film is the reduction of the internal stress due to the decrease in the formation of carbon atoms with sp 3 hybridization. As a consequence, the film hardness is reduced and the DLC film adhesion on the substrate is facilitated, arousing interest in synthesis and application of these films [15][16][17][18][19][20][21]67].The production of DLC and N-DLC films by plasma enhanced chemical vapor deposition (PECVD) technique comes as a potential alternative of a surface treatment since it presents a relatively low cost, clean technology and formation of the homogeneous and uniform film [9,22]. This technique is being the focus of research for DLC film formation in Ti 6 Al 4 V alloy for space application [23], for application of DLC film in 316L stainless steel to act as anti-bactericidal agent in biomedical device [24], used to produce DLC film on inner surface of a long stainless steel tube [25], used to show the beneficial effects on the increased electrochemical activity of the DLC film doped with nitrogen [16,26] and to investigate the lubricating effect of the DLC film doped with nitrogen deposited on 3024 stainless steel to improve the tribocorrosion properties of the studied material [27].Since nitrogen is a low cost and environmentally friendly gas, it could be used to modify the undesirable properties of the DLC film, maintaining the high hardness and low coefficient of friction characteristic of the a-C:H films.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…Another used technique consists of the doping of the film with different elements, such as boron, fluorine and nitrogen, which has been widely used to relieve the internal stress of the film [14][15][16].The effects of the nitrogen incorporating in DLC film is the reduction of the internal stress due to the decrease in the formation of carbon atoms with sp 3 hybridization. As a consequence, the film hardness is reduced and the DLC film adhesion on the substrate is facilitated, arousing interest in synthesis and application of these films [15][16][17][18][19][20][21]67].The production of DLC and N-DLC films by plasma enhanced chemical vapor deposition (PECVD) technique comes as a potential alternative of a surface treatment since it presents a relatively low cost, clean technology and formation of the homogeneous and uniform film [9,22]. This technique is being the focus of research for DLC film formation in Ti 6 Al 4 V alloy for space application [23], for application of DLC film in 316L stainless steel to act as anti-bactericidal agent in biomedical device [24], used to produce DLC film on inner surface of a long stainless steel tube [25], used to show the beneficial effects on the increased electrochemical activity of the DLC film doped with nitrogen [16,26] and to investigate the lubricating effect of the DLC film doped with nitrogen deposited on 3024 stainless steel to improve the tribocorrosion properties of the studied material [27].Since nitrogen is a low cost and environmentally friendly gas, it could be used to modify the undesirable properties of the DLC film, maintaining the high hardness and low coefficient of friction characteristic of the a-C:H films.…”
mentioning
confidence: 99%
“…The effects of the nitrogen incorporating in DLC film is the reduction of the internal stress due to the decrease in the formation of carbon atoms with sp 3 hybridization. As a consequence, the film hardness is reduced and the DLC film adhesion on the substrate is facilitated, arousing interest in synthesis and application of these films [15][16][17][18][19][20][21]67].…”
mentioning
confidence: 99%
“…Maka, berlaku peningkatan kadar pemendapan. Hasil kajian yang sama turut diperoleh oleh penyelidik lain (Khanis et al 2013) iaitu berlaku peningkatan kadar pemendapan apabila kuasa RF ditingkatkan. Dalam kajian ini, peningkatan kuasa RF menyebabkan pembentukan radikal C-N dan peningkatan penceraian gas dalam plasma.…”
Section: Kaedah Uji Kajiunclassified
“…Dalam teknik PECVD, penggabungan nitrogen dalam filem boleh dipengaruhi oleh perubahan kuasa RF disebabkan penjanaan plasma yang berbeza (Khanis et al 2013). Dalam kajian kami yang lepas, filem nipis a-CN x menunjukkan keamatan ikatan kimia meningkat apabila kuasa RF bertambah .…”
unclassified
“…There are many techniques to synthesis a-CN x thin films such as cyclic nitrogen radical sputtering [7], magnetron sputtering [3,8], PECVD [2,[9][10][11], and plasma assisted pulsed laser deposition [12]. Among these techniques, PECVD has been adored by many researchers.…”
Section: Introductionmentioning
confidence: 99%