2008
DOI: 10.1016/j.tsf.2007.06.220
|View full text |Cite
|
Sign up to set email alerts
|

Cat-CVD SiN passivation films for OLEDs and packaging

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1

Citation Types

0
19
0

Year Published

2009
2009
2019
2019

Publication Types

Select...
4
2

Relationship

0
6

Authors

Journals

citations
Cited by 24 publications
(19 citation statements)
references
References 7 publications
0
19
0
Order By: Relevance
“…It can be deposited by HWCVD using SiH 4 and NH 3 as precursor gasses. Heya et al [10] used a HWCVD roll-to-roll setup to coat a PET foil with SiN x at substrate temperatures between 20 and 100°C, obtaining a WVTR of 0.01 g/m 2 /day for a 40 nm layer. To check its reliability over time, this barrier was applied to an OLED, which is shown in Fig.…”
Section: Single Layer Inorganic Barriersmentioning
confidence: 99%
“…It can be deposited by HWCVD using SiH 4 and NH 3 as precursor gasses. Heya et al [10] used a HWCVD roll-to-roll setup to coat a PET foil with SiN x at substrate temperatures between 20 and 100°C, obtaining a WVTR of 0.01 g/m 2 /day for a 40 nm layer. To check its reliability over time, this barrier was applied to an OLED, which is shown in Fig.…”
Section: Single Layer Inorganic Barriersmentioning
confidence: 99%
“…This is due to a-SiN:H has a promising optical, electrical properties and chemical inertness against moisture and oxygen [3,4]. It is our common experience that the films deposited at low temperature show relatively larger band tail width, low adhesion to substrate, high porosity and large numbers of deep defect states in the mid gap states [5].…”
Section: Introductionmentioning
confidence: 99%
“…In particular, it occurs in the case of flexible polyethylene terephthalate (PET) substrate with the relatively high linear expansion coefficient, low glass transition temperature (T g < 300 8C), high optical transparency, and good chemical resistance and barrier properties. These issues become critical for use in the organic (OLED) display technology [3,4] and these backgrounds have motivated the present research. There have been many reports on the deposition of a-SiN:H films on the PET substrate by hot-wire chemical vapor deposition (HWCVD) with a gas mixture of silane (SiH 4 ) and ammonia (NH 3 ) [3,6].…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations