Casimir force pressure on the insulating layer in metal-insulator-semiconductor structures

Casimir Pressure in MDS-Structures

“…This effect decreases with decreasing thickness of the insulating layer. 12 For this reason, here we can use simple expressions for the reflection coefficients along the imaginary frequency axis:…”

Effect of pressure on the properties of Al-SiO2-n-Si<Ni> structures

“…There exists a number of papers (see, e.g., [3][4][5][6][7]) devoted to investigations of the effect of such external actions as thermal treatment and -irradiation on the parameters of interfaces. As to the effect of pressure, the available works deal predominantly with an analysis of the bulk properties variation in the layers of MOS structures [8][9][10][11]. The authors of [8][9][10] related the parameters variation in MOS structures subjected to a uniaxial elastic strain to changes in the concentration and mobility of the majority charge carriers in semiconductors.…”

“…As to the effect of pressure, the available works deal predominantly with an analysis of the bulk properties variation in the layers of MOS structures [8][9][10][11]. The authors of [8][9][10] related the parameters variation in MOS structures subjected to a uniaxial elastic strain to changes in the concentration and mobility of the majority charge carriers in semiconductors. In [11] the observed variations of relaxation characteristics under pressure were related to production of defect centers in insulator layers, while in [12] these characteristics were explained from the viewpoint of crystallographic orientation of the semiconductor crystal.…”