Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

Smiri, Badreddine; Hidouri, Tarek; Saidi, F.; Maâref, H.

doi:10.1007/s00339-019-2444-9

Cited by 13 publications

(9 citation statements)

References 27 publications

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“…This is the signature of carrier localization in the type-II inverted interface (InAsP) due to the inhomogeneity of indium distribution. 12) To further investigate the properties of the InAlAs/InP interfaces, power-dependent PL measurements were carried out. As the excitation power P ex was increased from 3 to 80 W cm −2 , all of the type-II transitions become blueshifted (∼14 meV) (see Fig.…”

Section: Resultsmentioning

confidence: 99%

“…This is a fingerprint of carrier localization, caused by alloy fluctuations in the material composition (clustering effects) and PZ field in the polar heterostructures. 12,26) The amount of clustering is expected to be strongly dependent on the growth conditions (e.g. substrate polarity and V/III flux ratio).…”

Section: Resultsmentioning

confidence: 99%

“…Thus, the non-uniformity of the alloy composition (cluster effect) is expected to form a localized energy level in type-II inverted interfaces (InAsP). 12) Carrier localization is a lovely phenomenon in quantum well (QW) structures, which can be formed by the impurities, lattice disorder, layer thickness or composition variation. [13][14][15] In our recent study, 12) we showed that the presence of localized carriers could be ascribed to the energy potential modulation associated with the indium cluster formation and PZ field.…”

Section: Introductionmentioning

confidence: 99%

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Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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We report on combined photoluminescence (PL) and micro-Raman microscopy to study the effect of the V/III flux ratio on InAlAs ternary alloy grown on (311)A InP by metal-organic chemical vapor deposition. The PL of the type-II transition was studied in a wide range of temperatures (10–300 K) and excitation intensities. As the V/III flux ratio increased from 25 to 125, a redshift of the type-II transition was observed. Then, micro-Raman investigations showed the presence of an LO mode related to LO-like InAs in InAsP alloy at the inverted interface in our samples. Furthermore, we discuss the effect of laser excitation wavelength on the Raman spectrum. We also note that phonon peaks are very sensitive to different excitation sources (364 to 638 nm). At lower frequencies, disorder-activated longitudinal acoustic phonons are also observed, which consider the presence of potential fluctuations. This last generate the carrier’s localization, which confirmed by PL measurements. In all samples, a blueshift of the type-II transition is noted with increasing the excitation power, which may reflect the presence of carrier localization, whereas the temperature-dependent PL peak energy displayed unusual behavior, such as consecutive red–blue–redshift (S-shaped) behavior and an inverted N-shape in the full width at half maximum. These unusual behaviors are explained by carriers captured by localized recombination centers. Moreover, in the room temperature PL spectra two types of emission were detected at 1.3 and 1.55 μm.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Smiri¹,

Saidi²,

Mlayah³

et al. 2020

Jpn. J. Appl. Phys.

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“…This leads to linewidth increase. When approaching the high temperature, most localized carriers become progressively mobile [36].…”

Section: Resultsmentioning

confidence: 99%

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Naceur

Choubani

Smiri

et al. 2020

Vacuum

Self Cite

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“…It is apparent that the intensities of band-edge peaks and localized state peaks tend to saturate at high injected current in a low-temperature range, which is normally a sign of the localization phenomenon. [22] Moreover, the tendency becomes linear and sublinear with the temperature increasing. Generally, the integral intensity is proportional to the excitation power, which can be expressed as I ∝ P α , where I and P represent the integrated intensity and excitation power, respectively.…”

Section: Excitation-dependent El Under Varying Temperaturementioning

confidence: 98%

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

Li¹,

Yang²,

Long³

et al. 2023

Chinese Phys. B

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The internal behaviors of carriers in InGaAsP single-junction solar cell are investigated by using electroluminescence (EL) measurements. Two emission peaks can be observed in current-dependent electroluminescence spectra at low temperatures, and carrier localization exists for both peaks under low excitation. The trends of power index α extracted from excitation-dependent EL spectra at different temperatures imply that there exists a competition between Shockley–Read–Hall recombination and Auger recombination. Auger recombination becomes dominant at high temperatures, which is probably responsible for the lower current density of InGaAsP solar cell. Besides, the anomalous “S-shape” tendency with the temperature of band-edge peak position can be attributed to potential fluctuation and carrier redistribution, demonstrating delocalization, transfer, and redistribution of carriers in the continuum band-edge. Furthermore, the strong reduction of activation energy at high excitations indicates that electrons and holes escaped independently, and the faster-escaping carriers are holes.

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Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates

Cited by 13 publications

References 27 publications

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

Power- and temperature-dependent photoluminescence investigation of carrier localization at inverted interface transitions in InAlAs/InP structures

The effect of nitridation on the optical properties of InAs quantum dots grown on GaAs substrate by MBE

Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell

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