Carrier Recombination Processes in Gallium Indium Phosphide Nanowires

Zhang, Wei; Zeng, Xiaolin; Su, Xiaojun; Zou, Xianshao; Mante, Pierre‐Adrien; Borgström, Magnus T.; Yartsev, Arkady

doi:10.1021/acs.nanolett.7b01159

Cited by 22 publications

(27 citation statements)

References 48 publications

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“…As compared to TRPL where either electron and hole trapping or both may influence the decays, 40 , 41 TRTS is selectively sensitive to time-dependent photoconductivity Δσ( t ) of the sample and hence to the product of carrier mobility μ and the concentration of mobile photogenerated charges. 45 For GaAs, electron mobility (μ e ) is significantly higher than hole mobility (μ h ); 46 − 48 thus, we presume that Δσ( t ) is mainly related to photogenerated electrons.…”

Section: Resultsmentioning

confidence: 99%

“…This can be related to a slow charge recombination, moderate electron trapping due to a relatively small number of traps, or to a non-negligible detrapping process of the electrons, which results in establishment of the equilibrium of trapped and mobile electrons. 41 With filling of the trap, the trapping rate decreases, whereas the detrapping rate may stay unchanged. As the proportionality of Δσ( t ) to the charge concentration varies with delay time, we can conclude that the electron trapping or reaching the trapping–detrapping equilibrium is not a very fast process.…”

Section: Resultsmentioning

confidence: 99%

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Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Zou

et al. 2020

ACS Appl. Mater. Interfaces

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As one of the successful approaches to GaAs surface passivation, wet-chemical nitridation is applied here to relate the effect of surface passivation to carrier recombination processes in bulk GaAs. By combining time-resolved photoluminescence and optical pump—THz probe measurements, we found that surface hole trapping dominates the decay of photoluminescence, while photoconductivity dynamics is limited by surface electron trapping. Compared to untreated sample dynamics, the optimized nitridation reduces hole- and electron-trapping rate by at least 2.6 and 3 times, respectively. Our results indicate that under ambient conditions, recovery of the fast hole trapping due to the oxide regrowth at the deoxidized GaAs surface takes tens of hours, while it is effectively inhibited by surface nitridation. Our study demonstrates that surface nitridation stabilizes the GaAs surface via reduction of both electron- and hole-trapping rates, which results in chemical and electronical passivation of the bulk GaAs surface.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Carrier Recombination Processes in GaAs Wafers Passivated by Wet Nitridation

Zou

et al. 2020

ACS Appl. Mater. Interfaces

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“…[160] Zhang et al [161] employed similar combination of methods for the investigation of Ga x In 1−x P nanowires. [160] Zhang et al [161] employed similar combination of methods for the investigation of Ga x In 1−x P nanowires.…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

Terahertz Spectroscopy of Nanomaterials: a Close Look at Charge‐Carrier Transport

Kužel

Němec

2019

Advanced Optical Materials

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Transport of charges is a fundamental process in many high-tech applications including photovoltaic or optoelectronic devices, but also in more ordinary components such as unsophisticated wires and other circuitry. The development of nanotechnologies resulted in the fabrication of highly complex materials consisting of a large variety of nanosized elements, which inevitably involve a multitude of charge transport processes occurring on various time-and length-scales. Figure 1 summarizes the most common nanoelements with high application potential.For example, the electrodes employed in Grätzel solar cells [1] are composed of percolated networks of a huge number of metal oxide nanoparticles (top-left panel in Figure 1). Colloidal nanocrystals form the basis for thin film electronics and flexible electronic devices. [2] The synthetic approaches control their composition, size and electronic structure (energy levels, density of states within the bands and in the bandgap) and the charge-carrier transport. [2,3] Nanowires and nanotubes made of conventional semiconductors are quasi 1D systems combining Terahertz spectroscopy has been used for almost two decades for investigations of nanomaterials, including nanocrystals, nanoparticles, nanowires, nanotubes or 2D crystals. Its great importance stems from the fact that it is a noncontact method and, owing to its high frequency and broadband character, it is capable of characterizing charge transport properties within individual nano-objects but also among them. In addition, probing of photoinitiated ultrafast charge dynamics is possible thanks to the sub-picosecond time resolution. Despite this unprecedented potential, the interpretation of the measured terahertz conductivity spectra in many materials is still intensively debated. Herein is presented a review of the experiments performed on nanostructures of conventional semiconductors and on carbon nanomaterials (graphene and carbon nanotubes) during the past decade. The state of the art of the theoretical formalism is provided and discussed, including the intrinsic response, as well as the role of inherent heterogeneity and of the experimental conditions.

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“…TRPL was measured using a setup described in ref. 51. A Ti: Sapphire fs oscillator (∼100 fs, Spectra-Physics, Tsunami) at ∼780 nm or a frequency-doubled (400 nm) s-polarized ( perpendicular to the nanowire axis) light was used for excitation.…”

Section: Time-resolved Photoluminescence (Trpl) Measurementsmentioning

confidence: 99%