Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe

Aven, M.; Segall, B.

doi:10.1103/physrev.130.81

Cited by 226 publications

(52 citation statements)

References 25 publications

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“…The small valance band offset between ZnTe and CdTe (0-0.2 eV) (Riovx et al, 1993;Aven and Segall, 1963) leads to a low potential barrier at the interface and hence an easy hole transport between layers. ZnTe thin films of few nanometers were prepared by electron beam evaporation technique.…”

Section: Fabrication Of Pv Devicesmentioning

confidence: 99%

Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels

et al. 2015

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a b s t r a c tCdTe is the best suited semiconductor for solar cells due to its band gap value 1.47 eV which is close to solar spectrum, low sublimation temperature and high absorption coefficient in the range of solar spectrum. To improve the photovoltaic performance of CdS/CdTe thin film solar cells, the CdS window layer is alloyed with different concentration of ZnS to reduce the resistivity and increase the band gap values. The single crystal CdTe based solar cell devices were prepared by vacuum evaporation method and have undergone for different temperature at various illumination levels to enhance the cell efficiency. We have achieved 14.37% efficiency and increased short circuit current density and open circuit voltage by reducing series resistance of the cell.

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Section: Fabrication Of Pv Devicesmentioning

confidence: 99%

Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels

et al. 2015

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“…The mobility was measured at several temperatures, however the reliable correlation between the temperature and mobility was not established. It was found later [2] that electron scattering by polar optical phonons dominates at high temperatures. For analysing electron scattering by deformation potential, the authors [2] have used the value of deformation potential equal to 4 eV and obtained very high values of mobility (40 times larger than the experimental data).…”

Section: Introductionmentioning

confidence: 98%

“…It was found later [2] that electron scattering by polar optical phonons dominates at high temperatures. For analysing electron scattering by deformation potential, the authors [2] have used the value of deformation potential equal to 4 eV and obtained very high values of mobility (40 times larger than the experimental data). They have concluded that the acoustic type of scattering is not essential.…”

Section: Introductionmentioning

confidence: 98%

Electron mobility in ZnSe single crystals

Avdonin

Nedeoglo

et al. 2003

Physica Status Solidi (b)

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Temperature dependence of electron mobility in n-ZnSe single crystals is investigated in the temperature range 77-300 K. A comparative analysis of experimental data with the known theoretical dependences calculated using solution of the Boltzmann transport equation and taking into consideration all major scattering mechanisms and screening effects is carried out. The good agreement between the experimental and theoretical dependences of electron mobility on both temperature and electron concentration is observed for the samples with various compensation ratios. It is shown that parameters such as the ionized impurity concentration and acceptor concentration can quickly be estimated for strongly compensated samples.В интервале температур от 77 до 300 К исследована температурная зависимость подвижности электронов в монокристаллах n-ZnSe. Проведен сопоставительный анализ экспериментальных данных с известными теоретическими зависимостями, полученными из решения кинетического уравнения Больцмана с учетом основных механизмов рассеяния и процессов экранирования. Наблюдается хорошее согласие экспериментальных и рассчитанных зависимостей подвижности электронов от температуры и концентрации носителей тока с учетом различной степени компенсации примеси. Показано, что для сильно компенсированных образцов может быть сделана экспресс-оценка таких параметров, как концентрация ионизированной примеси и концентрация акцепторов.

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“…Since the work of Aven and Segall [12] many experiments have been made combining optical and electrical measurements on relatively shallow acceptors in ZnTe. All these results are presented in Fig.…”

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confidence: 99%

Optical identification of substitutional acceptors in refined ZnTe

Magnéa

Bensahel

Pautrat

et al. 1979

Physica Status Solidi (b)

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A systematic study of acceptors incorporated by diffusion is carried out on refined melt-grown ZnTe. The properties of five substitutional acceptors are investigated by low-temperature photoluminescence. Since the binding energy of excitons on neutral acceptors is almost unaffected by the central cell potential, the neutral acceptors are identified by the two-hole transitions which give accurate values of acceptor ionization energies. The two dominant acceptors "b" at 61 meV and "a" a t 149 meV are identified as Lizn and CUZ,,, respectively, while the hole binding energies on Nazn, Bgz,, and Auzn are established as 62.8, 123, and 272 meV, respectively. These experiments show that all the relatively shallow acceptors involve impurities and not stoichiometric defects.Une Ctude systematique des accepteurs introduits par diffusion a 8t6 faite sur ZnTe. Les propriCtes de cinq accepteurs sont CtudiCes en photoluminescence. Comme 1'6nergie de liaison des excitons sur les accepteurs neutres n'est pas affectee par le potentiel de cellule centralc, les accepteurs sont identifies gr&e aux transitions deux-trous qui donnent une valeur tr&s precise de la profondeur de chaque niveau. Les deux accepteurs dominants: "a" ti 149 meV e t "b" B 61 meV sont attribuCs au lithium e t au cuivre en site zinc alors que les niveaux accepteurs introduits par Na, Ag e t Au sont respectivement ti 62.8, 123 e t 272 meV. L'ensemble de ces experiences montre que tous les accepteurs peu profonds mettent en jeu des impuretCs e t non des dbfauts de stoechiometrie.

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Carrier Mobility and Shallow Impurity States in ZnSe and ZnTe

Cited by 226 publications

References 25 publications

Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels

Study the efficiency of single crystal CdTe/ZnCdS solar cell at various temperatures and illumination levels

Electron mobility in ZnSe single crystals

Optical identification of substitutional acceptors in refined ZnTe

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