Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Hu, Jiye; Rao, Kui; Luo, Jianxun; Hu, Lianjie; Liu, Ziran

doi:10.48550/arxiv.2203.03389

2022

DOI: 10.48550/arxiv.2203.03389

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Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Jiye Hu¹,

Kui Rao²,

Jianxun Luo³

et al.

Abstract: FIG. 1. The band structures of H (a-f) and T(g-l) types of Janus TMDs monolayers. The Fermi level is set to zero. II. METHODS

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Carrier mobilities of Janus transition metal dichalcogenides monolayers studied by Born effective charge and first-principles calculation

Abstract: FIG. 1. The band structures of H (a-f) and T(g-l) types of Janus TMDs monolayers. The Fermi level is set to zero. II. METHODS

Cited by 0 publications

References 46 publications

No citations

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