Carrier localization mechanisms in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N/GaN quantum wells

Watson-Parris, Duncan; Godfrey, M.; Dawson, Philip E.; Oliver, Rachel A.; Galtrey, M. J.; Kappers, Menno J.; Humphreys, C. J.

doi:10.1103/physrevb.83.115321

Cited by 171 publications

(172 citation statements)

References 28 publications

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“…We include in our calculations disklike 2 monolayer thick well-width fluctuations at one of the QW interfaces. This is a reasonable representation of the well-width fluctuations that have been observed in APT and is consistent with earlier approaches to the modeling of such features [28]. However, for the m-plane QW structure considered here, we do not expect that 2 monolayer thick well-width fluctuations are of central importance for the description of the electronic and optical properties.…”

Section: B Structural Characterization: Input Into the Theoretical Fsupporting

confidence: 70%

“…First, the full width at half maximum (FWHM) of the PL spectrum is 135 meV. This value is much larger than typical FWHM values found in c-plane systems [42]. Although it should be noted that the PL spectrum exhibits an extended low-energy tail, we have shown previously [21] that in our samples this low-energy tail arises from recombination in QWs present on semipolar facets which form at step bunches associated with the miscut of the GaN substrate.…”

Section: B Experimental Results: Optical Characterizationmentioning

confidence: 79%

“…The strong variations in the hole ground state energies in cplane systems are attributed to hole wave function localization effects due to random alloy fluctuations [28,29,35]. To confirm this behavior in a nonpolar system, Fig.…”

Section: Gs and Holementioning

confidence: 99%

“…Obviously, these approaches completely neglect wave function localization arising from effects that could be attributed to the microscopic alloy structure. Recently, continuum-based approaches have been modified to include random alloy fluctuations [27][28][29]. Even though such an approach captures some of the localization effects introduced by alloy fluctuations it cannot reveal the microscopic origin of localization effects, including in particular the presence of In-N-In-N chains as shown by density functional theory (DFT) [30,31].…”

Section: Introductionmentioning

confidence: 99%

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Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Schulz¹,

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et al. 2015

Phys. Rev. B

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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an m-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

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Section: B Structural Characterization: Input Into the Theoretical Fsupporting

confidence: 70%

Section: B Experimental Results: Optical Characterizationmentioning

confidence: 79%

Section: Gs and Holementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Schulz¹,

Tanner

O’Reilly

et al. 2015

Phys. Rev. B

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“…First, only very recently theoretical studies have accounted for localization effects due to the disorder in realistic wurtzite InGaN QWs. 2,14,[16][17][18] The theoretical approaches range from modified continuum-based studies up to atomistic calculations. All these studies clearly show that alloy fluctuations in wurtzite InGaN/GaN QWs lead to strong carrier localization effects.…”

mentioning

confidence: 99%