Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experiments

Spear, W. E.; Steemers, H.; Mannsperger, H.

doi:10.1080/13642818308228575

Cited by 37 publications

(5 citation statements)

References 6 publications

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“…This doping dependence of the hole PTR product is in qualitative agreement with the results from other measurements, such as charge collection (8), delayed field experiments (9) and the recent solar cell investigation by Okamoto et al (1). This doping dependence of the hole PTR product is in qualitative agreement with the results from other measurements, such as charge collection (8), delayed field experiments (9) and the recent solar cell investigation by Okamoto et al (1).…”

Section: Resultssupporting

confidence: 89%

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Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Könenkamp¹,

Madan²

1985

MRS Proc.

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The junction recovery technique is used to investigate recombination parameters and kinetics in thin film a-Si:H diodes.It is found that double injection occurs in most of the p-i-n type samples at sufficient forward bias and that the recovery currents are dominated by the extraction of trapped holes from the valence bandtail.The mobility-lifetime product of the recovered carriers is seen to be strongly dependent on the dopant concentration in the active layers of the devices.

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Section: Resultssupporting

confidence: 89%

“…It might be speculated that this is due to a decrease in the electron lifetime with p-type doping (9).…”

Section: Itmentioning

confidence: 99%

Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Könenkamp¹,

Madan²

1985

MRS Proc.

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“…Looking for other references to ITOF measurements on comparable materials in the literature, we can find only a handful applying to selenium-and silicon-based photoreceptors. Unequivocally, the amplitude of the recovered photosignals in a-Se (Kasap et al 1988, Polischuk et al 1991, Cl doped a-Se (Methley 1986) and a-Si:H (Spear et al 1983) were reported to decrease exponentially with t. Moreover, the carrier life-times inferred from these measurements agreed with those determined from the initial decay of the transient signal (Methley 1986). Unfortunately, since MDPs are very different from Se and Si compounds, direct comparison between these materials is not possible.…”

Section: Resultsmentioning

confidence: 51%

Study of carrier transport in molecularly doped polymers by interrupted time-of-flight measurements

Németh-Buhin

Juhasz

1997

J. Phys.: Condens. Matter

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Interrupted hole transit experiments were carried out on dispersions of DEH, BD, and DBH in polycarbonate, using electron beam excitation. The sweep field was switched off for intervals t between 10 ms and 10 s. On re-applying the field after more than 30 ms, the transit current initially rose to a value lower than that before interruption, but then gradually increased until holes began to arrive at the collecting electrode. The observations of a current plateau in uninterrupted transits, and of almost constant total charge collected irrespective of t, suggest negligible deep trapping. The results seem incompatible with monoenergetic polaron transport, but can be understood on the basis of the Gaussian disorder model. When the field is switched off, the hole population 'cools', slowly sinking into tail states. When the field is restored it is more quickly 're-heated' towards its original field-enhanced mean energy.

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“…The technique becomes much more difficult when the quantum efficiency is strongly field dependent, or when the applied field is comparable to any built-in field. Nevertheless, the transient-photoconductivity technique can still be used to determine the carrier lifetime by operating the TOF method in the interrupted field mode [22]. The IFTOF measurement, in essence, involves interrupting the transit of photoinjected charge carriers during their flight across the specimen in the conventional TOF measurement.…”

Section: Introductionmentioning

confidence: 99%

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

Mikla

2011

Journal of Non-Crystalline Solids

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Carrier lifetimes in amorphous silicon junctions from delayed and interrupted field experiments

Cited by 37 publications

References 6 publications

Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Recombination Under Double Injection Conditions in a-Si:H Based Diodes.

Study of carrier transport in molecularly doped polymers by interrupted time-of-flight measurements

Xerographic spectroscopy of gap states in Se-rich amorphous semiconductors review

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