Carrier lifetime versus ion-implantation dose in silicon on sapphire

Doany, F. E.; Grischkowsky, D.; Chi, C.-C.

doi:10.1063/1.98173

Cited by 202 publications

(80 citation statements)

References 11 publications

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“…Studies have shown that the recombination time in unpassivated Si is of the same order as the transition time from transient to steady state behavior reported here. 12,13 If indeed the electrons recombine after ~100 ps, then the steady state component should be driven solely by the diffusion of heat (thermal wave). To verify this assertion a second experiment was conducted that involved coating the sample with a thin (30 nm) aluminum film.…”

Section: Resultsmentioning

confidence: 99%

Imaging carrier and phonon transport in Si using ultrashort optical pulses

et al. 2009

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A series of experiments have been conducted that microscopically image thermal diffusion and surface acoustic phonon propagation within a single crystallite of a polycrystalline Si sample. The experimental approach employs ultrashort optical pulses to generate an electron-hole plasma and a second probe pulse is used to image the evolution of the plasma. By decomposing the signal into a component that varies with delay time and a steady state component that varies with pump modulation frequency, the respective influence of carrier recombination and thermal diffusion are identified. Additionally, the coherent surface acoustic phonon component to the signal is imaged using a Sagnac interferometer to monitor optical phase.

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Section: Resultsmentioning

confidence: 99%

Imaging carrier and phonon transport in Si using ultrashort optical pulses

et al. 2009

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“…It has been found in [35] that free-carrier trapping rate in this material increases linearly with O + -ion implantation dose and the measured carrier lifetime decreases down to the limit of 600 fs at doses above 3·10 14 cm -2 . Fig.…”

Section: Radiation-damaged Silicon-on-sapphirementioning

confidence: 99%

“…6 shows the carrier lifetime in SOS as a function of the implanted O + -ion dose. As a most probable cause of this carrier lifetime limit, the authors of [35] pointed out the amorphisation of the crystalline silicon and the saturation of the trap density. Similar conclusion was made in [36], where transient carrier dynamics in the radiation-damaged SOS was measured by the optical pump-THz probe technique.…”

Section: Radiation-damaged Silicon-on-sapphirementioning

confidence: 99%

Semiconductors for terahertz photonics applications

Krotkus¹

2010

J. Phys. D: Appl. Phys.

108

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Abstract:Generation and measurement of ultrashort, sub-picosecond pulses of electromagnetic radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency range has recently become a versatile tool of the far-infrared spectroscopy and imaging. This technique -THz time-domain spectroscopy, in addition to a femtosecond pulse laser, requires semiconductor components manufactured from materials with a short photoexcited carrier lifetime, high carrier mobility, and large dark resistivity. Here we will review most important developments in the field of investigation of such materials. Main characteristics of low-temperature-grown or ion-implanted GaAs and semiconducting compounds sensitive in the wavelength ranges around 1 µm and 1.5 µm will be surveyed. The second part of the paper is devoted to the effect of surface emission of THz transients from semiconductors illuminated by femtosecond laser pulses. Main physical mechanisms leading to this emission as well as their manifestation in various crystals will be described.

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“…During operation, the excitation pulses short the transmission line by producing carriers in the silicon. These carriers are trapped in less than 600 fs [14]. This transient shorting of the line produces two approximately 0.5-ps electrical pulses which propagate as single-mode excitations in opposite directions down the transmission line.…”

Section: Generation Of Single-mode Ultrashort Electrical Pulses Omentioning

confidence: 99%

Optoelectronic characterization of transmission lines and waveguides by terahertz time-domain spectroscopy

Grischkowsky

2000

IEEE J. Select. Topics Quantum Electron.

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Abstract-An overview is presented of an experimental search for an ultrawide-band transmission channel with low dispersion and loss. Such a terahertz (THz) interconnect will soon be required by the insatiable demand for higher speed devices and wider bandwidth communication. Starting with the early optoelectronic generation and detection of single-mode, subpicosecond electrical pulses on coplanar transmission lines, their complete characterization by THz time-domain spectroscopy (THz-TDS) is described. The consequent discovery of phase-coherent Cherenkov radiation in the form of an electromagnetic shock wave from these propagating electrical pulses is discussed together with its dominant role in the large measured propagation loss of these pulses. Various techniques to reduce this radiation are presented. The importance of dielectric materials characterization is explained and illustrated by THz-TDS measurements of high substrates. Newly obtained THz waveguide results are presented and compared to the performance of coplanar transmission lines.

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Carrier lifetime versus ion-implantation dose in silicon on sapphire

Cited by 202 publications

References 11 publications

Imaging carrier and phonon transport in Si using ultrashort optical pulses

Imaging carrier and phonon transport in Si using ultrashort optical pulses

Semiconductors for terahertz photonics applications

Optoelectronic characterization of transmission lines and waveguides by terahertz time-domain spectroscopy

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