Carrier injection and backgating effect in GaAs MESFET's

Lee, C.P.; Lee, S.J.; Welch, B.M.

doi:10.1109/edl.1982.25493

Cited by 101 publications

(13 citation statements)

References 5 publications

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“…Growth of semi-insulating InP bulk crystals by the liquid-encapsulated-Czochralski (LEC) technique has been achieved routinely by doping with iron (1)(2)(3)(4)(5)(6)(7)(8). Resistivity greater than 10 ~ 12-cm can be attended.…”

Section: Atand T Bell Laboratories Murray Hill New Jersey 07974mentioning

confidence: 99%

Backgating in Ion‐Implanted GaAs MESFET

Tang

Lowe

Abdel‐Motaleb

et al. 1985

J. Electrochem. Soc.

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Section: Atand T Bell Laboratories Murray Hill New Jersey 07974mentioning

confidence: 99%

Backgating in Ion‐Implanted GaAs MESFET

Tang

Lowe

Abdel‐Motaleb

et al. 1985

J. Electrochem. Soc.

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“…The sharp increase in sidegate current at threshold voltage is one or two orders of magnitude lower than those predicted by TFL theory, which agrees with the experiment. 2 The decrease of the channel current is generally attributed to the expansion of the space-charge region related with the CS junction, which is determined by the CS junction voltage. In Fig.…”

Section: Discussionmentioning

confidence: 99%

“…The trap-fill-limited ͑TFL͒ model by Lampert and Mark was previously used to explain the drastic increase in the substrate leakage current. 2 However, this model predicts excessive threshold voltage and is difficult to explain the hysteresis and the S-type negative differential conductivity associated with the sidegating effect. 5,6 To overcome these difficulties, the impact ionization of deep traps in the substrate was considered in a new model.…”

Section: Introductionmentioning

confidence: 99%

Improved analytical model for threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors induced by impact ionization of deep traps

Fuchuan

Guanqun

et al. 1999

Journal of Applied Physics

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Articles you may be interested inResponse to "Comment on 'Carrier trapping and current collapse mechanism in GaN metal-semiconductor field effect transistors'" [Appl. Phys. Lett.86, 016101 (2005)] Appl. Phys. Lett. 86, 016102 (2005); 10.1063/1.1844604 Carrier trapping and current collapse mechanism in GaN metal-semiconductor field-effect transistors Determination of energy levels of surface states in GaAs metal-semiconductor field-effect transistor using deeplevel transient spectroscopy Threshold behavior in backgating in GaAs metal-semiconductor field-effect transistors: Induced by limitation of channel-substrate junction to leakage current

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“…Jumping phenomena have already been observed in semiinsulating GaAs substrates [13], [14]. A theoretical study [14] has reported a current component assisted by deep traps in an n-i-n structure, where electrons are injected from an n to an i-layer.…”

Section: Anomalous Behavior In Pn-junction Current and Carrier Trmentioning

confidence: 95%

Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions

Yamaguchi

Teshima

Mizuta

1999

IEEE Trans. Electron Devices

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Abstract-An anomalous current observed in reverse-biased pn junctions, highly-integrated with an extremely small cells, is analyzed with the help of device simulation. At the tail of the appearance probability, junction currents showed a steep increase and saturation as a function of applied bias.A model of localized deep-traps is proposed to explain the anomaly. The deep traps are formulated as a g/r center based on the Shockley-Read-Hall model. Simulation results clarify the mechanism of the current anomaly: when deep traps are included in the depletion layer, they act as a carrier generation center and the junction current steeply increases. The magnitude of the current after saturation is discussed, focusing on capture rate and trap density. Further, experimental features for the anomaly, e.g., the fluctuation in the critical voltage at which the current begins to increase and the structure dependence of the anomalous current, are also discussed using the present deep-trap model.

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Carrier injection and backgating effect in GaAs MESFET's

Cited by 101 publications

References 5 publications

Backgating in Ion‐Implanted GaAs MESFET

Backgating in Ion‐Implanted GaAs MESFET

Improved analytical model for threshold behavior of sidegating effect in GaAs metal–semiconductor field-effect transistors induced by impact ionization of deep traps

Numerical analysis of an anomalous current assisted by locally generated deep traps in pn junctions

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