2021
DOI: 10.1002/pssa.202100614
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Abstract: Herein, it is demonstrated that low temperature current injection and annealing (CIA) treatment can cause evident improvements in open circuit voltage, short‐circuit current, and fill factor of tunnel oxide‐passivated contact (TOPCon) silicon solar cells, leading to a notable conversion efficiency gain (over 0.4% absolute at the best condition). The effects of injected current and annealing temperatures toward the improvement of electrical performance of the TOPCon solar cells are compared. The more evident in… Show more

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Cited by 2 publications
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“…The light soaking that is being widely used in SHJ solar cells can improve the surface passivation and reduce J 0c by reducing the density of interface states acting as the recombination center 205,206 . The current injection and annealing (CIA) and reverse bias annealing can effectively passivate the defects and reduce ρ c of c ‐Si solar cells by promoting the transport of interstitial hydrogen into the c ‐Si wafers 231 . The hydrogen passivation that has been achieved by different strategies in PERC, TOPCon, and SHJ technologies is also worth trying in dopant‐free passivating contacts, such as FGA treatment and so forth.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The light soaking that is being widely used in SHJ solar cells can improve the surface passivation and reduce J 0c by reducing the density of interface states acting as the recombination center 205,206 . The current injection and annealing (CIA) and reverse bias annealing can effectively passivate the defects and reduce ρ c of c ‐Si solar cells by promoting the transport of interstitial hydrogen into the c ‐Si wafers 231 . The hydrogen passivation that has been achieved by different strategies in PERC, TOPCon, and SHJ technologies is also worth trying in dopant‐free passivating contacts, such as FGA treatment and so forth.…”
Section: Discussionmentioning
confidence: 99%
“…205,206 The current injection and annealing (CIA) and reverse bias annealing can effectively passivate the defects and reduce ρ c of c-Si solar cells by promoting the transport of interstitial hydrogen into the c-Si wafers. 231 The hydrogen passivation that has been achieved by different strategies in PERC, TOPCon, and SHJ technologies is also worth trying in dopant-free passivating contacts, such as FGA treatment and so forth.…”
Section: 175mentioning
confidence: 99%