Carrier-induced formation of electrically active boron-interstitial clusters in irradiated boron-doped silicon
X. C. Chen,
L. Li,
M. Y. Wang
et al.
Abstract:Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional mode… Show more
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