2001
DOI: 10.1016/s0925-9635(00)00556-2
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Carrier generation within the surface region of hydrogenated thin film polycrystalline diamond

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Cited by 27 publications
(14 citation statements)
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“…Figure 3 shows four point sheet resistivity measurements for samples A-D over the 10-300 K temperature range. The resistivity of all samples increases with decreasing temperature as is to be expected, the room temperature values being comparable with those available in the literature [3][4][5]15]. Figures 4 and 5 show the sheet carrier concentrations and carrier mobilities derived from the Hall measurements for samples A-D, plotted as a function of sample temperature.…”
Section: Methodssupporting
confidence: 80%
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“…Figure 3 shows four point sheet resistivity measurements for samples A-D over the 10-300 K temperature range. The resistivity of all samples increases with decreasing temperature as is to be expected, the room temperature values being comparable with those available in the literature [3][4][5]15]. Figures 4 and 5 show the sheet carrier concentrations and carrier mobilities derived from the Hall measurements for samples A-D, plotted as a function of sample temperature.…”
Section: Methodssupporting
confidence: 80%
“…Problems with doping diamond both n-type and p-type, due to the high density of the diamond lattice, have hindered the commercial realisation of devices. However, exposing diamond to a hydrogen plasma yields a surface conductive layer with p-type carriers of low activation energy [1][2][3][4][5][6][7][8][9]. This phenomenon has been utilised to fabricate diodes and field effect transistors on homoepitaxial and polycrystalline films, which display excellent characteristics at room temperature [10][11][12].…”
mentioning
confidence: 99%
“…Additionally, the non-ionized SH form, mainly existing in natural pH of water, was most effectively oxidized in a direct way. 2) at BDD 2 and BDD 10 .…”
Section: Discussionmentioning
confidence: 93%
“…For both anodes, the anodic peak current attributable to SMR appeared in potential window where no oxygen evolution takes place. The potential of SRM oxidation was 0.92 and 1.0 V for BDD 10 and BDD 2 , respectively. This fact indicates that the direct oxidation of SMR at BDDs is possible; the reaction is faster at BDD 10 electrode compared to BDD 2 electrode.…”
Section: Oxidation Of Sulphamerazine (Smrmentioning
confidence: 98%
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