Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling

Huang, Daming; Chyi, Jen-Inn; Morkoç̌, H.

doi:10.1103/physrevb.42.5147

Cited by 82 publications

(63 citation statements)

References 20 publications

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“…2, dashed curve). In general, our observations are in agreement with many experimental investigations showing that the features associated with optical transitions involving filled subbands are rather weak or even unobservable both in absorption [6,18] and various differential spectra, including the DSPV ones [24][25][26]. Enhanced absorption peaks near the Fermi energy known as the Fermi edge singularities [15] usually manifest themselves only at very low temperatures, therefore, in our case are hardly probable.…”

Section: Phase Space Fillingsupporting

confidence: 93%

“…Filling of the 1hh subband with holes should lead to a decrease in oscillator strengths and binding energy of 11H excitons [6,18] causing their suppression due to coupled action of Pauli exclusion principle and Coulomb screening effects. At the same time, the 11L excitons associated with the relatively empty first light-hole subband, 1lh, experiencing mainly only Coulomb screening should continue to exist.…”

Section: Phase Space Fillingmentioning

confidence: 99%

“…Both experimental and theoretical studies [6][7][8][12][13][14][15][16][17][18] show that many-body effects, such as phase-space filling [6-8, 12, 13, 18], band gap renormalization (BGR) [7,[12][13][14][15][16][17], and the Fermi edge singularity (Mahan exciton) [15], may also strongly influence the evolution of optical spectra in highly doped QWs. However, some questions concerning the differences in doping effects of the n-and p-type QW structures [7], renormalization of multi-component valence subbands [12,13,17] or optical properties at the Mott transition [4,7,8,13] still remain open.…”

mentioning

confidence: 99%

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Differential surface photovoltage spectroscopy of δ‐doped GaAs/AlAs multiple quantum wells below and close to Mott transition

Kavaliauskas¹,

Krivaitė²,

Čechavičius³

et al. 2008

Physica Status Solidi (b)

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Differential surface photovoltage (DSPV) spectra of Be δ‐doped GaAs/AlAs multiple quantum wells (MQWs) with doping densities below (5 × 1010 cm–2) and near (5 × 1012 cm–2) a Mott transition were studied at 300 K and 90 K. From the line shape analysis of the DSPV spectra, exhibiting obvious doping and temperature dependences, an origin of optical transitions has been revealed. The spectra of lightly doped structures were accounted for by ground state heavy and light‐hole related excitonic transitions. In highly doped GaAs/AlAs MQWs the heavy‐hole excitons were found to be quenched while rather broadened light‐hole related transitions still exhibited an excitonic character. The experimental observations suggest that with increasing doping level phase‐space filling effects dominate over Coulomb screening. The renormalization effects due to many body interactions were found to be more pronounced for the lowest heavy‐hole subband when compared to the light‐hole one. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Phase Space Fillingsupporting

confidence: 93%

Section: Phase Space Fillingmentioning

confidence: 99%

mentioning

confidence: 99%

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Differential surface photovoltage spectroscopy of δ‐doped GaAs/AlAs multiple quantum wells below and close to Mott transition

Kavaliauskas¹,

Krivaitė²,

Čechavičius³

et al. 2008

Physica Status Solidi (b)

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“…Yildirim and Tomak [35] studied the effects of the asymmetry and electric field on the nonlinear ISB optical absorption GaAs QWs. Huang et al [36] investigated the ISB absorption for modulation-doped square QWs. Li [37] discussed the effect of interdiffusion on the ISB optical properties in a modulation-doped QW structure.…”

Section: Introductionmentioning

confidence: 99%

“…Many studies associated with both the ISB optical transitions and the nonlinear optical properties induced by interband and ISB transitions in semiconductor quantum well [28][29][30][31][32][33][34][35][36][37][38][39] and quantum dot (QD) [40][41][42] structures are reported in the literature. Ahn and Chuang [28] calculated the linear and nonlinear ISB optical absorption coefficients in a semiconductor QW.…”

Section: Introductionmentioning

confidence: 99%

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

Ungan

2011

Journal of Luminescence

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Exciton Formation Dynamics and Band‐Like Free Charge‐Carrier Transport in 2D Metal Halide Perovskite Semiconductors

Motti

Kober‐Czerny

Righetto

et al. 2023

Adv Funct Materials

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Metal halide perovskite (MHP) semiconductors have driven a revolution in optoelectronic technologies over the last decade, in particular for high‐efficiency photovoltaic applications. Low‐dimensional MHPs presenting electronic confinement have promising additional prospects in light emission and quantum technologies. However, the optimisation of such applications requires a comprehensive understanding of the nature of charge carriers and their transport mechanisms. This study employs a combination of ultrafast optical and terahertz spectroscopy to investigate phonon energies, charge‐carrier mobilities, and exciton formation in 2D (PEA)2PbI4 and (BA)2PbI4 (where PEA is phenylethylammonium and BA is butylammonium). Temperature‐dependent measurements of free charge‐carrier mobilities reveal band transport in these strongly confined semiconductors, with surprisingly high in‐plane mobilities. Enhanced charge‐phonon coupling is shown to reduce charge‐carrier mobilities in (BA)2PbI4 with respect to (PEA)2PbI4. Exciton and free charge‐carrier dynamics are disentangled by simultaneous monitoring of transient absorption and THz photoconductivity. A sustained free charge‐carrier population is observed, surpassing the Saha equation predictions even at low temperature. These findings provide new insights into the temperature‐dependent interplay of exciton and free‐carrier populations in 2D MHPs. Furthermore, such sustained free charge‐carrier population and high mobilities demonstrate the potential of these semiconductors for applications such as solar cells, transistors, and electrically driven light sources.

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Carrier effects on the excitonic absorption in GaAs quantum-well structures: Phase-space filling

Cited by 82 publications

References 20 publications

Differential surface photovoltage spectroscopy of δ‐doped GaAs/AlAs multiple quantum wells below and close to Mott transition

Differential surface photovoltage spectroscopy of δ‐doped GaAs/AlAs multiple quantum wells below and close to Mott transition

Intensity-dependent nonlinear optical properties in a modulation-doped single quantum well

Exciton Formation Dynamics and Band‐Like Free Charge‐Carrier Transport in 2D Metal Halide Perovskite Semiconductors

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