Carrier dynamics in GaAs–Al0.46Ga0.54As superlattice structure grown by molecular beam epitaxy

Tailoring Optical Nonlinearities via the Purcell Effect

“…Finally, we note that close to room temperature (285 K), the system in Ref. 22 displays Γ nr ≈ 10Γ rad , which is predicted to yield a maximum enhancement factor of 1.06. Since this number is fairly negligible, it illustrates that this approach has little impact when non-radiative losses dominate the decay of the electronic system.…”

“…At a temperature of about 200 K, Γ nr ≈ 0.1Γ rad [22]. Although experimental measurements for γ phase are unavailable to the authors, the presence of a substantial phonon bath at that temperature leads one to expect a fairly large value, which may be conservatively estimated by 10Γ rad .…”

“…2. A GaAs-AlGaAs single quantum well can lie in the interesting regime discussed above, where the radiative loss rate Γ rad dominates the non-radiative loss rate Γ nr as well as the overall loss rate of the quantum well, for certain temperatures [22]. Equation (8) implies that one can see substantial enhancement of the Kerr coefficient in that regime.…”

“…We observe an enhancement in the real part of the Kerr coefficient up to a factor of 12, close to the predicted maximum enhancement factor of 10.48 in the regime of large detunings (∆T 2 1). Also, at a temperature of about 225 K, Γ nr ≈ Γ rad [22], and again we take γ phase = 10Γ rad . These results are displayed in Fig.…”