Carrier distribution and low-field resistance in short n+-n--n+and n+-p--n+structures

Ziel, A. van der; Shur, M. S.; Lee, Kwyro; Chen, Tzu-Hung; Amberiadis, Kostas

doi:10.1109/t-ed.1983.21086

Cited by 32 publications

(3 citation statements)

References 7 publications

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“…A change in work function occurred upon proceeding from PdO to Pd to PdH x when H 2 sensing modulated the conductivity of the silicon channel through a change in the Si surface electrostatic potential. The current–voltage characteristics of the PdO-decorated PNB devices can be described by the following equation as the response behavior of the devices toward H 2 detection: I normalD = q n ( 0 ) μ V L A where n (0) is the carrier density in the n – region of the PNB device, μ is the low-field mobility, L is the length of the n – region, V is the applied bias, and A is the cross section of the active channel of the PNB device; the carrier density can be given by n ( 0 ) = N d + exp [ q φ false( 0 false) k T ] where N d + is the ionized donor density in the n – region and φ(0) is the Si surface electrostatic potential. According to eq , increasing the potential would cause the carrier density to increase, leading to an increase in the current of the PdO-decorated PNB device after H 2 exposure, as displayed in eq .…”

Section: Resultsmentioning

confidence: 99%

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Lin

Pan

et al. 2023

ACS Appl. Nano Mater.

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In this paper, we present a method, involving plasmaenhanced atomic layer deposition and constant-power device-localized Joule heating (DLJH), for the selective deposition of palladium oxide (PdO) nanoparticles at the n − region of n + /n − /n + polysilicon nanobelt (PNB) devices. These PdO-decorated PNB devices were then operated under DLJH so that the temperature of the n − region was maintained during the sensing of H 2 gas. From their measured responses, the devices operated at a temperature of 339 K exhibited the most reactive interactions between PdO and H 2 . Considering the possibility of humidity interference, we also characterized the PdO-decorated PNB devices for H 2 sensing at various relative humidities. The PdO nanoparticles on the PNB devices having a grain distance that sustained a spillover effect were almost immune to RH interference.

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Section: Resultsmentioning

confidence: 99%

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Lin

Pan

et al. 2023

ACS Appl. Nano Mater.

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“…The response recovered gradually to the baseline when H 2 supply was turned off. The response behavior of the devices toward H 2 can be understood by considering the I-V characteristics of the double-junction device, determined using the equation [18] ( ) ( )…”

Section: Samplementioning

confidence: 99%

Hydrogen gas sensors from polysilicon nanobelt devices selectively modified with sensing materials

Tran¹,

Pan²,

Sheu³

2016

Nanotechnology

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Double-junction n/n/n polysilicon nanobelts featuring selectively deposited sensing materials have been investigated for application as H gas sensors. The selective modification of the devices was performed through a combination of localized ablation of a resist and lift-off of a previous catalyst material deposited through e-beam evaporation. Four nanobelt devices, differentiated by their doping concentrations at the n region (from 2.5 × 10 to 2.5 × 10 cm), were analyzed in terms of the responses to H and their self-heating effects. A low doping concentration improved the response at room temperature, owing to a longer Debye length. The variation in the H-induced surface potential associated with temperature, accounting for degradation in the response of the nanobelts with Joule heating bias, was analyzed in terms of the I-V characteristics of the double-junction device. Among various catalysts (Pt, Pd, Pt/Pd) evaluated for their H sensing characteristics, an ultrathin film of Pt/Pd was most favorable.

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“…Mathematically this problem is identical to that of electron spill-over in crystalline n +-i-n+ structures [5] where the thermal energy kT in the crystalline problem is substituted by EA and n by nt where n is the free electron density and nt is the trapped electron density. In particular, for the relevant case when the concentation of carriers in the i-layer is much smaller than that in the n+ -regions we find…”

Section: Theorymentioning

confidence: 99%

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

Shur

Hack²

1985

MRS Proc.

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We describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques.Varying the intrinsic layer thickness allows us to measure the ,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjknels of 0.45 microns and deduced the density of localised states to be 3 xlO'cm-eV-at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

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Carrier distribution and low-field resistance in short n⁺-n^--n⁺and n⁺-p^--n⁺structures

Cited by 32 publications

References 7 publications

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Selective Deposition of PdO Nanoparticles on Si Nanodevices for Hydrogen Sensing

Hydrogen gas sensors from polysilicon nanobelt devices selectively modified with sensing materials

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

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