Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content

Zhang, Mengjie; Han, Donglai; Ma, Ning; Gao, Renxian; Zhu, Aonan; Guo, Shuang; Zhang, Yongjun; Wang, Yaxin; Yang, Lili; Zhong, Hua

doi:10.1021/acs.jpclett.8b02416

Cited by 36 publications

(29 citation statements)

References 32 publications

(49 reference statements)

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“…To further analyze the effect of carrier variation on SERS enhancement, we employed the Hall effect, which can be used to detect the carrier density and mobility of a metal or semiconductor [31]. The Hall effect can be quantitatively analyzed to determine the effect of the doped ZnO content in the Ag film on the carrier density.…”

Section: Resultsmentioning

confidence: 99%

Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

et al. 2020

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A two-dimensional polystyrene microsphere array cosputtered with Ag and ZnO was designed for evaluating surface-enhanced Raman scattering (SERS) activity. The surface plasmon resonance (SPR) and SERS properties were significantly changed by the introduction of ZnO into the Ag film. By increasing the Ag sputtering power, a redshift of the SPR peak was obtained. Moreover, improved SERS activity occurred because of the electromagnetic (EM) contribution from the increasing Ag content and the charge transfer (CT) contribution from the introduction of ZnO. More importantly, the Hall effect was employed to evaluate the carrier density effect on the SERS contribution of the Ag/ZnO film. The increase in the carrier density as the Ag sputtering power increased indicated an increasing number of free electrons stored in the Ag/ZnO film, which was accompanied by improved EM and CT contributions.

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Section: Resultsmentioning

confidence: 99%

Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

et al. 2020

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“…Ag and Cu 2 S were cosputtered and used as a new composite substrate, as designed by Zhang et al 56 Using this metal and inorganic semiconductor composite material, the effect of carrier changes on the LSPR and CT processes was explored. In this system, the carrier concentration in the entire substrate is changed by changing the relative content of the semiconductor in the composite material of the noble metals Ag and Cu 2 S. Under this premise, the obtained UV–vis absorption spectra show that with a change in carrier concentration, LSPR undergoes a significant redshift.…”

Section: Metal/semiconductor Composite Substratesmentioning

confidence: 99%

Charge transfer study for semiconductor and semiconductor/ metal composites based on surface‐enhanced Raman scattering

Wang

Guo

et al. 2021

Bulletin Korean Chem Soc

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With the development of the surface‐enhanced Raman scattering (SERS) technique, new multipurpose and multiperformance SERS‐active substrates have been developed. Semiconductor and semiconductor/metal composites show versatility and SERS activity for theoretical and practical applications. Semiconductor‐based SERS substrates with different microstructures, materials and compositions have been prepared to explore the enhancement effect on Raman signals. The discovery of the SERS enhancement effect of semiconductors makes up for the gap that SERS development is limited to metal‐based materials. Semiconductor/metal composite substrates have established preparation technology that is compatible with the characteristics of different materials to form a stable and solid substrate that can regulate the SERS enhancement mechanism. These composites establish a good model for the theoretical research of SERS, which is of great significance to explore its enhancement mechanism. In this review, various semiconductor materials are introduced as SERS‐active substrates. Versatile applications of semiconductor‐based SERS and its enhancement mechanism are also presented.

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“…The study of this composite structure provides a new approach for examining the surface plasmon oscillation regulation and CT mechanism. 23 In addition, cosputtering of Ag and Cu 2 S on a polystyrene (PS) template resulted in an excellent localized surface plasmon resonance (LSPR) that was tunable because of the control of the carrier density of the Ag and Cu 2 S composite substrates. The LSPR and CT determined by the carrier concentration were investigated by adjusting the semiconductor content.…”

Section: Metal/semiconductor Composite-based Sersmentioning

confidence: 99%

“…The carrier density is characterized by the Hall effect to analyze the Raman shift caused by CT and to obtain the relationship between them (Figure 4). 23…”

Section: Metal/semiconductor Composite-based Sersmentioning

confidence: 99%

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Recent Development of SERS Technology: Semiconductor-Based Study

et al. 2019

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As a new analytical technology, surface-enhanced Raman scattering (SERS) has received increasing attention, and researchers have discovered the importance of SERS-active materials. Considerable effort has been made by researchers to develop multiperformance and multipurpose SERS-active substrates ranging from coinage metals to transition metals and semiconductor materials. SERS-active substrates are critical for obtaining accurate and reproducible spectral information. Among all the substrate materials, semiconductors are considered one of the most promising materials, as they exhibit high chemical stability, good biocompatibility, high carrier mobility, and good controllability during fabrication. Here, we provide an overview of SERS enhancement mechanisms based on semiconductor materials, such as inorganic semiconductors, metal/semiconductor composites, and organic semiconductors.

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Carrier Density-Dependent Localized Surface Plasmon Resonance and Charge Transfer Observed by Controllable Semiconductor Content

Cited by 36 publications

References 32 publications

Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

Improved Charge Transfer Contribution by Cosputtering Ag and ZnO

Charge transfer study for semiconductor and semiconductor/ metal composites based on surface‐enhanced Raman scattering

Recent Development of SERS Technology: Semiconductor-Based Study

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