Carrier-Concentration Dependence of Electron-Phonon Scattering in Te-Doped GaSb at Low Temperature

Poujade, A. M.; Albany, H.J.

doi:10.1103/physrev.182.802

Cited by 36 publications

(18 citation statements)

References 40 publications

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“…In undoped films, τ D1 is associated with electron-LO-phonon interactions (τ e-LO = 1.68 ps), which remains unchanged with the pump power (with n), thus reflecting the fact that the rate of polar Fröhlich electron-LO-phonon interaction (1/τ e-LO ) is independent of the carrier density [4]. One exception can occur for a degenerate electron gas in heavily doped semiconductors due to the energy band nonparabolicity, which mainly appears in low-temperature measurements [28]. In contrast, τ R in undoped samples is associated with electron-electron interactions and hence slightly decreases with increasing n (figure 3) since the electron-electron scattering rate (1/τ R ) varies with carrier density as n 2/3 and as n in 3D and 2D structures, respectively [29].…”

Section: Resultsmentioning

confidence: 97%

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃

Glinka

Babakiray

Holcomb

et al. 2016

J. Phys.: Condens. Matter

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Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi 2-x Mn x Se 3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x = 0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x = 0.013 -0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn 2+ acceptors and their dimers. The shortest decay-time (~0.75 ps) measured for the film with x = 0.27 suggests a great potential of Mn-doped Bi 2 Se 3 films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states.

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Section: Resultsmentioning

confidence: 97%

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃

Glinka

Babakiray

Holcomb

et al. 2016

J. Phys.: Condens. Matter

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“…The classical treatment of this problem in semiconductors was provided by Ziman [3,14,15], where simplified models for the phonon dispersion, the electronic structure, and the interaction matrix elements were used for a closed-form analytic formula with limited accuracy and applicability (only valid at low temperatures in degenerate semiconductors). Ensuing experiments in semiconductors also suffered from the difficulty of separating the EPI from other scattering mechanisms of phonons, and thus remained qualitative and/ or limited to very low temperatures [16][17][18][19][20][21][22][23][24][25][26][27][28]. Again the common wisdom was that the EPI would only be important on the phonon transport at low temperatures, partly due to the fact that most of the studies analyzed samples with carrier concentrations below 10 18 cm −3 .…”

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confidence: 99%

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

et al. 2015

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The electron-phonon interaction is well known to create major resistance to electron transport in metals and semiconductors, whereas fewer studies are directed to its effect on phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 10 19 cm −3 (the reduction reaches up to 45% in p-type silicon at around 10 21 cm −3 ), a range of great technological relevance to thermoelectric materials. The coordinates of electrons and atomic nuclei represent the most common degrees of freedom in a solid. The full quantum mechanical treatment of the excitations in a solid thus requires the solution of the Schrödinger equation involving the coordinates of all electrons and atomic nuclei, which appears intractable in most cases. A widely applied simplification, the Born-Oppenheimer approximation (BOA) [1], makes use of the fact that the electrons' mass is much smaller than that of the nuclei, and the electrons respond to the motions of the nuclei so quickly that the nuclei can be treated as static at each instant. Under the BOA, the coordinates of the nuclei enter the electronic Schrödinger equation as external parameters, and in turn the electronic ground-state energy acts as part of the interaction energy between the nuclei given a specific configuration, with which the quantized excitations of the atomic nuclei, namely phonons, can be investigated separately from the electrons [2]. It is important to note, however, that the BOA does not separate the electronic and atomic degrees of freedom completely, and a remaining coupling term can cause transitions between the eigenstates of the electron and phonon systems [3]. This electronphonon interaction (EPI) problem was first studied by Bloch [4], and later understood as the main source of resistance to electrical conduction in metals and semiconductors at higher temperatures [3,5,6], and played the key role in the microscopic theory of superconductivity [7].While the effect of the EPI on electron transport has been widely studied in great detail and has become standard content in textbooks [3,5,6], its effect on phonon transport has received much less attention. In our opinion the reason is twofold. First of all, the carrier concentration in semiconductors for conventional microelectronic and optoelectronic applications is typically below 10 19 cm −3 [8], and as we shall show later, the impact of the EPI on phonon transport in this concentration range turns out to be too small to invoke any practical interest. On the other hand, in metals with typical carrier concentrations greater than 10 22 cm −3 , the thermal conduction is dominated by electrons, an...

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“…Another interesting perspective, which goes beyond the scope of this work, concerns the investigation of the impact of a modified interaction with phonons induced by collective effects on the thermal conductivity of the doped semiconductor. Indeed it has been shown experimentally and theoretically that electron-phonon interaction can modify both the electronic and lattice contribution to the thermal conductivity [34,35].…”

Section: Discussionmentioning

confidence: 99%

Quantum Theory of Multisubband Plasmon– Phonon Coupling

et al. 2020

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We present a theoretical description of the coupling between longitudinal optical phonons and collective excitations of a two-dimensional electron gas. By diagonalizing the Hamiltonian of the system, including Coulomb electron-electron and Fröhlich interactions, we observe the formation of multisubband polarons, mixed states partially phonon and partially multisubband plasmon, characterized by a coupling energy which is a significant fraction, up to ∼ 40%, of the phonon energy. We demonstrate that multisubband plasmons and longitudinal optical phonons are in the ultra-strong coupling regime in several III-V and II-VI material systems.

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Carrier-Concentration Dependence of Electron-Phonon Scattering in Te-Doped GaSb at Low Temperature

Cited by 36 publications

References 40 publications

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

Quantum Theory of Multisubband Plasmon– Phonon Coupling

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Carrier-Concentration Dependence of Electron-Phonon Scattering in Te-Doped GaSb at Low Temperature

Cited by 36 publications

References 40 publications

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Significant Reduction of Lattice Thermal Conductivity by the Electron-Phonon Interaction in Silicon with High Carrier Concentrations: A First-Principles Study

Quantum Theory of Multisubband Plasmon– Phonon Coupling

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Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi₂Se₃