Carrier Collection Improvement in InGaAs/GaAsN Multiple Quantum Well Solar Cell with Flat Conduction Band

Design and analysis of GaAsN based solar cell for harvesting visible to near-infrared light

“…The reason for the increase of the J sc and V oc in Cell 1 is due to the reduction of the reverse saturation current and electrical conductivity [15,33]. At the value of large N A , recombination of electron-hole pair reduces the number of carrier at the electrode which results in constant J sc [28,33]. As shown in figure 5(c), there is no effect of V oc , J sc , FF, and η on acceptor density in the p + -AlGaAs layer.…”

“…The decrease of the values of solar cell parameters is due to the small number of photons absorption at lower thickness and higher recombination rate of free electrons and holes before they move toward the electrodes. A thicker layer enables to enhance the photons absorption and create large number of electron hole pairs, which dominantly enhances amount of the photo-generated current[25,28,29]. However, thicker absorber layer increases the solar cell fabrication cost significantly.…”

Design and Simulation of GaAsN Based Solar Cell with AlGaAs Blocking Layer for Harvesting Visible To Near-Infrared Light

“…In order to investigate the impact of doping density, the acceptor density N A in p + -GaAs and p ++ -GaAs layers is varied from 5.0×10 14 to the enhancement of the reverse saturation current and electrical conductivity [15,34]. At the value of large N A , recombination of electron-hole pair reduces the number of carrier at the electrode which results in constant J sc [30,34]. As shown in Fig.…”