Carbon-rich amorphous silicon carbide and silicon carbonitride films for silicon-based photoelectric devices and optical elements: Application from UV to mid-IR spectral range

Sha, Bo; Lukianov, Anatolii; Dusheiko, Mykhailo; Lozinskii, V. B.; Klyui, Andriy N.; Korbutyak, D. V.; Pritchin, S.E.; Klyui, NickolaiI.

doi:10.1016/j.optmat.2020.109959

Cited by 18 publications

(5 citation statements)

References 29 publications

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“…[5][6][7] Therefore, they have attracted much attention of many scholars. [8][9][10][11][12] SiCNT is an important low-dimensional material, which not only has the excellent characteristics of SiC crystal, but also shows some unique characteristics of nanotubes. [13][14][15][16][17] The unique optical characteristics of semiconductor SiCNT provide the possibility for its applications in optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Yang¹,

Gong²,

Ma³

et al. 2021

Chinese Phys. B

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Silicon carbide nanotubes (SiCNTs) have broad application prospects in the field of micro-nanodevices due to their excellent physical properties. Based on first-principles, the difference between optical properties of SiCNTs where C atom or Si atom is replaced by group-V element is studied. The results show that the optical absorptions of SiCNTs doped by different elements are significantly different in the band of 600 nm–1500 nm. The differences in photoconductivity, caused by different doping elements, are reflected mainly in the band above 620 nm, the difference in dielectric function and refractive index of SiCNTs are reflected mainly in the band above 500 nm. Further analysis shows that SiCNTs doped with different elements change their band structures, resulting in the differences among their optical properties. The calculation of formation energy shows that SiCNTs are more stable when group-V element replaces Si atom, except N atom. These research results will be beneficial to the applications of SiC nanomaterials in optoelectronic devices and provide a theoretical basis for selecting the SiCNTs’ dopants.

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Section: Introductionmentioning

confidence: 99%

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Yang¹,

Gong²,

Ma³

et al. 2021

Chinese Phys. B

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“…Silicon is one of the most widely used semiconductor materials, and its nanostructures have received much attention in the photovoltaic, energy storage, thermoelectric and chemical and biological sensors [1][2][3][4]. Etching a silicon wafer in the {100} orientation will form a square pyramid with a surface crystal orientation of {111}, which will substantially improve the light absorption properties of the wafer.…”

Section: Introductionmentioning

confidence: 99%

Rapid graphene oxide assisted chemical etching of silicon in HF/H₂O₂ solution

Xu,

Zhao,

Chen

et al. 2024

Phys. Scr.

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In recent years, graphene oxide assisted etching silicon has been considered a potential method to replace metal-assisted chemical etching. This work demonstrated the catalytic ability of graphene oxide synthesized by the Hummers method to promote chemical etching of silicon. By adjusting HF/H2O2 ratio of the solution and reaction temperature, a minimum weighted average reflectance of 9.9% in the wavelength range of 300–1100 nm was obtained. An etching rate of 10 μm h−1, faster than those in others’ reports, was obtained in an optimized acidic solution at 80 °C. Finally, a four-electron model for graphene oxide assisted etching mechanism was proposed to explain our research results.

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“…Silicon carbonitride films are attractive coatings for advanced technology due to their favorable physical characteristics, including optical properties. Due to their tunable refractive index and bandgap, SiCN coatings are perspective materials for solar cell technology, UV detectors operated at high temperatures, integrated photonics and solid state lighting [1][2][3][4]. Plasma enhanced chemical vapor deposition (PECVD) is one of the most common deposition techniques for SiC:H (SiCN:H) films formation that allows for producing high-quality films with good adhesion to the substrate, and also lowering the temperature required for precursor activation and film formation.…”

Section: Introductionmentioning

confidence: 99%

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

et al. 2023

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PECVD SiC:H (SiCN:H) films were produced using tetramethylsilane (TMS) as a precursor in a mixture with inert helium or ammonia as a source of nitrogen. Mild plasma conditions were chosen in order to prevent the complete decomposition of the precursor molecules and promote the incorporation of the fragments of precursor into the film structure. The effect of deposition temperature and composition of gas mixture on the chemical bonding structure, elemental composition, deposition rate, and optical properties (transmittance, optical bandgap, and refractive index) of films have been examined. Use of the chosen deposition conditions allowed them to reach a relatively high deposition rate (up to 33 nm/min), compared with films produced in high plasma power conditions. Use of ammonia as an additional gas led to effective incorporation of N atoms in the films. The composition of the films moved from SiC:H to SiN:H with increasing of ammonia content to P(NH3)/P(TMS) = 1. The refractive index and optical bandgap of the films varied in the range of 1.55–2.08 and 3.0–5.2 eV, correspondingly, depending on the film composition and chemical bonding structure. The effect of treatment of SiCN films deposited at 400 °C by plasma of He, O2 or NH3 were studied by X-ray photoelectron spectroscopy, atomic force microscopy, and contact angle measurements. It was shown that plasma treatment significantly changes the surface characteristics. The water contact angle of the film was changed from 71 to 37° after exposure in the plasma conditions.

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Carbon-rich amorphous silicon carbide and silicon carbonitride films for silicon-based photoelectric devices and optical elements: Application from UV to mid-IR spectral range

Cited by 18 publications

References 29 publications

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Rapid graphene oxide assisted chemical etching of silicon in HF/H₂O₂ solution

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

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Carbon-rich amorphous silicon carbide and silicon carbonitride films for silicon-based photoelectric devices and optical elements: Application from UV to mid-IR spectral range

Cited by 18 publications

References 29 publications

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Effects of substitution of group-V atoms for carbon or silicon atoms on optical properties of silicon carbide nanotubes*

Rapid graphene oxide assisted chemical etching of silicon in HF/H2O2 solution

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

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Product

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Rapid graphene oxide assisted chemical etching of silicon in HF/H₂O₂ solution