Carbon re-incorporation in phosphorus-doped Si1−yCy epitaxial layers during thermal annealing

Chang, Hsiang-Szu; Lin, I-Ping; Twan, Sheng Chen; Woon, Wei Yen; Lee, Sheng Wei

doi:10.1016/j.jallcom.2012.10.158

Cited by 3 publications

(1 citation statement)

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“…[1][2][3] Silicon-carbon alloy (Si:C) source/ drain (S/D) 4,5 has recently been considered as a tuning knob for boosting electron mobility in n-type metal oxide semiconductor field effect transistors (nMOSFETs). Nonequilibrium methods including molecular beam epitaxy (MBE), 6 chemical vapor deposition (CVD), 7 and ion implantation, 8 are needed to elevate substitutional carbon (C sub ) concentration in silicon due to low equilibrium solid solubility of carbon in silicon ($10 17 atom/cm 3 ). Among the above methods, ion implantation with subsequent solid phase epitaxial regrowth (SPER) 9,10 offers a simpler and faster integration scheme.…”

Section: Introductionmentioning

confidence: 99%

On the doping limit for strain stability retention in phosphorus doped Si:C

Chuang

Woon

2014

Journal of Applied Physics

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Strain and SiC particle formation in silicon implanted with carbon ions of medium fluence studied by synchrotron x-ray diffraction Strain stability of phosphorus doped pseudomorphically strained Si:C alloy is investigated via high-resolution X-ray diffractometry, Fourier transform infrared spectroscopy, and Hall measurement. Significant strain relaxations are found under post-annealing treatment far below b-SiC precipitation threshold temperature, especially for the highest phosphorus doped case. Most of the substitutional carbon is retained and no further b-SiC formation can be found for all samples investigated. Volume compensation through gettering of interstitial atoms around substitutional carbon is considered as a probable mechanism for the observed strain relaxation. The strain relaxation effect can be further reduced with HF treatment prior to post-annealing process. We found an upper limit for ion implant dose (<1 Â 10 14 atom/cm 2 ) for the retention of strain stability in phosphorus doped Si:C. V C 2014 AIP Publishing LLC. [http://dx.

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