Carbon Nitride Supported Ultrafine Manganese Sulfide Based Nonvolatile Resistive Switching Device for Nibble-Sized Memory Application

Abstract

A high-temperature in situ route has been employed for the synthesis of carbon nitride supported manganese sulfide nanoparticles (CNMS). The hybrid material was characterized using different analytical techniques. The electrical property of the CNMS-based device demonstrated the resistive switching behavior with asymmetric S-type bipolar characteristics. The device exhibited the SET and RESET processes at +2.7 and −3.5 V, respectively, with the on−off ratio of ∼10 3 . The endurance and data retention studies were conducted for 10 3 cycles and 10 3 s, respectively, and the device revealed excellent stability with a constant on−off ratio. In this study, we also have demonstrated a nibble-sized device, made with CNMS, successfully processed, stored, and recovered the information in a binary form.

Translation of a chemical reaction to electrical signal generation: an organic–inorganic complexation strategy

“…Initially, a small number of electrons were generated at the electrode-[Cu(I)-CYS] interface, and under the influence of a potential, the mobility of the electrons was attributed to the Ohmic conduction, where the current was proportional to the electric field with a slope value of 0.99. 28 As mentioned previously, a further increase in voltage (from 2.2 to 3.0 V) influenced the reduction of Cu(I) with the formation of an atomic copper, followed by the copper nanoparticles. For a voltage ranging from 2.2 to 3.0 V (OFF-state) (Fig.…”

Carbon Nitride-Supported Nickel Oxide Nanoparticles for Resistive Memory Application

“…The peak at 284.5 eV is assigned to the graphitic form of carbon (sp 2 hybridization) and the peak located at 288.3 eV corresponds to N–CN ( s -triazine rings). , The high-resolution N 1s spectrum, Figure E, was deconvoluted into three peaks as shown in Figure B. The peaks located at 398.1, 400.1, and 401.5 eV correspond to C–N–C, N–C 3 , and N–H, respectively, of the CN structure. , …”

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“…STT-MRAM has a drawback of reliability, while PCM has a disadvantage of an extensive write latency. Therefore, an alternative of a nonvolatile memory device for the next generation has been proposed by researchers in the form of resistive random-access memory (RRAM) devices with the advantages of low power consumption, high scalability, simple structure, easy fabrication, small size, and low cost. ,,− ,,,,− Applications of RRAMs include but are not limited to aerospace, chaotic circuits, − neuromorphic computing, ,− memory devices, ,,− ,,− ,− and logical circuit displays. − RRAMs are usually fabricated as a vertical device with a functional layer of an insulator/semiconductor sandwiched between two metallic electrodes; however, it can also have a planar structure. − RRAMs can be further classified into nonvolatile and volatile memory devices on the basis of applied electric field, because nonvolatile memories can retain data even without the application of an external power supply, while volatile memories cannot retain their stored data in the absence of applied voltage. − RRAMs usually operate reversibly with...…”