Carbon Nanowalls Grown by Microwave Plasma Enhanced Chemical Vapor Deposition

Wu, Yihong; Qiao, Peiwen; Chong, Towchong; Shen, Zexiang

doi:10.1002/1521-4095(20020104)14:1<64::aid-adma64>3.0.co;2-g

Cited by 514 publications

(390 citation statements)

References 14 publications

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“…A 10 nm thick interface layer composed of carbon nanoislands was firstly formed on the Si substrate for a short time, and then CNWs growth began from the nuclei on the interface layer [13]. In order to realize the industrial applications of CNWs with unique characteristics, it is very important to understand the growth mechanism of the initial layer and CNWs to achieve control of the characteristics and morphologies that are appropriate to each application [5][6][7]. Moreover, the nucleation of CNWs in the very early phase must be very important for control of the characteristics and morphology.…”

Section: Initial Growth Processes Of Carbon Nanowallsmentioning

confidence: 99%

“…Significant recent attention has been focused on the functionalities of CNWs for future devices because of their unique morphologies and excellent electrical properties. For example, since they have large surface-to-volume ratios and very high aspect ratios, they are expected as catalyst supporting materials in fuel cells, field emitters, and various kinds of templates [5][6][7]. In addition, the recent reports of extremely high carrier mobilities in graphene sheets suggest that the CNWs would also possess excellent electrical properties.…”

Section: Introductionmentioning

confidence: 99%

“…And, to establish such the controlled synthesis techniques of CNWs, it is essential to clarify their growth mechanisms. For the synthesis of the CNWs, the plasma-enhanced chemical vapor deposition (PECVD) systems are used in most cases and no catalyst is necessary for its growth [5][6][7][8][9][10][11]. However, their growth mechanisms have not been sufficiently clarified yet.…”

Section: Introductionmentioning

confidence: 99%

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Section: Initial Growth Processes Of Carbon Nanowallsmentioning

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Section: Introductionmentioning

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Nucleation and Vertical Growth of Nano-Graphene Sheets

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“…Plasma-enhanced CVD (PECVD) allows the efficient growth of high purity vertically aligned carbon nanotubes (VACNTs) at lower temperatures [9]. Many applications of CNTs have been reported, including their use as probes in atomic force microscopy (AFM), as electron emitters for field emission displays (FED), as nanofillers for composite materials, as electrodes for fuel cells and as nanoscale electronic devices for micro-/nano-electro mechanical systems (MEMS/NEMS) [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Growth of Vertically Aligned Carbon Nanotubes by DCPECVD System and the Effects of C2H2 Concentration and Plasma Current on the Growth Behavior of CNTs

2011

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A direct current plasma enhanced chemical vapor deposition (DC PECVD) apparatus was designed and constructed to synthesize high purity vertically well-aligned carbon nanotubes (VACNTs) at relatively low temperatures. The effect of C 2 H 2 concentration and plasma current on CNT growth was investigated. The DC PECVD synthesis of CNTs consisted of two steps: (1) reduction with gaseous H 2 and NH 3 to form catalyst nanoparticles, and (2) subsequent CNT growth in the presence of gaseous H 2 and C 2 H 2 . High-resolution transmission electron microscopy images confirmed the presence of multi-walled carbon nanotubes (MWCNTs). Their graphitic structure was then confirmed by Raman spectroscopy. Scanning electron microscopy (SEM) results illustrated the relationship between the plasma, C 2 H 2 concentration and CNT growth. Deviation of acetylene flow rate from an optimal rate led to deterioration of CNT growth. Comparing SEM images of CNTs grown with and without plasma showed that plasma had an important role in VACNT formation.

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“…Such NSs materials can typically structure into, zero-dimensional (0D) e.g., quantum dot /nanoparticles [4][5][6][7][8] , one-dimensional (1D) e.g., nanowires and nanorods (NRs) [9][10][11] , and two-dimensional (2D) e.g., nanosheets and nanowalls. [12][13][14][15] Compared to 0D and 2D, 1D NSs have the advantage of the possibility of being vertically oriented, which is crucial for many device applications. [16] Among a variety of metal oxides, zinc oxide (ZnO) have a preference of the favorable formation in all NSs forms mentioned above on any substrate being crystalline or amorphous.…”

Section: Introductionmentioning

confidence: 99%

Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications

Alnoor¹

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One-dimensional (1D) nanostructures (NSs) of Zinc Oxide (ZnO) such as nanorods (NRs) have recently attracted considerable research attention due to their potential for the development of optoelectronic devices such as ultraviolet (UV) photodetectors and light-emitting diodes (LEDs). The potential of ZnO NRs in all these applications, however, would require synthesis of high crystal quality ZnO NRs with precise control over the optical and electronic properties. It is known that the optical and electronic properties of ZnO NRs are mostly influenced by the presence of native (intrinsic) and impurities (extrinsic) defects. Therefore, understanding the nature of these intrinsic and extrinsic defects and their spatial distribution is critical for optimizing the optical and electronic properties of ZnO NRs. However, identifying the origin of such defects is a complicated matter, especially for NSs, where the information on anisotropy is usually lost due to the lack of coherent orientation. Thus, the aim of this thesis is towards the optimization of the lowtemperature solution-based synthesis of ZnO NRs for device applications. In this connection, we first started with investigating the effect of the precursor solution stirring durations on the deep level defects concentration and their spatial distribution along the ZnO NRs. Then, by choosing the optimal stirring time, we studied the influence of ZnO seeding layer precursor’s types, and its molar ratios on the density of interface defects. The findings of these investigations were used to demonstrate ZnO NRs-based heterojunction LEDs. The ability to tune the point defects along the NRs enabled us further to incorporate cobalt (Co) ions into the ZnO NRs crystal lattice, where these ions could occupy the vacancies or interstitial defects through substitutional or interstitial doping. Following this, high crystal quality vertically welloriented ZnO NRs have been demonstrated by incorporating a small amount of Co into the ZnO crystal lattice. Finally, the influence of Co ions incorporation on the reduction of core-defects (CDs) in ZnO NRs was systematically examined using electron paramagnetic resonance (EPR)

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Carbon Nanowalls Grown by Microwave Plasma Enhanced Chemical Vapor Deposition

Cited by 514 publications

References 14 publications

Nucleation and Vertical Growth of Nano-Graphene Sheets

Nucleation and Vertical Growth of Nano-Graphene Sheets

Growth of Vertically Aligned Carbon Nanotubes by DCPECVD System and the Effects of C2H2 Concentration and Plasma Current on the Growth Behavior of CNTs

Toward the Optimization of Low-temperature Solution-based Synthesis of ZnO Nanostructures for Device Applications

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