Recently, carbon-nanotube (CNT) has been widely explored for applications in cold cathode fluorescent lamp[1], luminescent tube[2], x-ray source [3][4][5] and field emission display (FED) [6,7] because of its excellent field emission properties. Among all these applications, FED using CNT cathode is very attractive. Some groups have reported FEDs using screen-printed or directly-grown CNT cathode [8]. Compared to screen-printing, directly-growth method had some advantages such as easiness to achieve high resolution and possible lower driving voltage. In this paper, we demonstrated the process of growing CNT on glass and its application in a FED structure.64×48 arrays of patterned CNT were prepared on a glass substrate with the diagonal length of 2-inch. After the glass was ultrasonically cleaned in acetone and alcohol., magnetron sputtering and optical lithography was used to pattern the cathode electrodes and the catalyst. Later the patterned glass was transferred to a programmable CVD furnace. The furnace was pumped to about 1 kPa. After the treatment with 200 sccm hydrogen for 30 min at 550 °C, a mixture of argon, hydrogen and acetylene with the ratio of 200:200:120 was introduced for 20 min. The sample was protected with argon during the cool down. A scanning electron microscopy (SEM, FEI Quanta 400 FEG) was employed to observe the morphology of the CNT cathode. Field emission test using diode structure was done in a vacuum chamber with base pressure of 1×10 -6 Pa. Fig.1 was the SEM image of prepared CNT cathode and the inset shows the CNT patterns prepared on electrodes. The CNTs have little impurity and are in very high density. The length of the CNTs was about several micrometers. The diameter of the CNTs was uniform and was about 30 nm. The field emission characteristic was shown in Fig.2. From Fig.2 we can derived that the turn-on field (corresponding to current density of 10 µA/cm 2 ) and threshold field (corresponding to current density of 1 mA/cm 2 ) were 3.5 V/µm and 8.5 V/µm, respectively. The field emission uniformity was good. If we lower the gap between the anode and cathode to about 50 µm, the driving voltage was lower than 400 V.After the primary test, we applied this kind of CNT cathode on planar gated FED structure. The cathode electrodes were first fabricated by optical lithography and magnetron sputtering. Later an insulated layer composed of SiO 2 and SiN x was coated on top of the glass substrate by plasma enhanced chemical vapor deposition (PECVD, Oxford System 80). Then the gate electrodes were fabricated in the same way as fabricating the cathode electrodes. After that we used reaction ion etching (RIE) to etch the insulated layer to expose the small spots containing catalysts. Finally, CNTs were grown by vacuum thermal CVD method. SEM examination of the prepared FED structure shows that the structure is well fabricated.We have successfully grown CNT on glass that with good field emission properties by 1-4244-1134-3/07/$25.00©2007 209 vacuum thermal CVD method. The method is compatible...