2007
DOI: 10.1889/1.2770861
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Carbon nanotubes and semiconductor nanowires for active‐matrix backplanes

Abstract: — Carbon nanotubes and semiconductor nanowires are a new class of materials currently being studied within the context of molecular electronics. Because of their excellent characteristics, transistors based on carbon nanotubes and semiconductor nanowires could become the workhorse of the post‐CMOS era. Since carbon nanotubes as well as Si or Ge nanowires can be grown at low temperature, using similar CVD‐type processes and on non‐crystalline and non‐refractory substrates, they could (and will) certainly be use… Show more

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Cited by 6 publications
(4 citation statements)
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“…Here we present a systematic study of the synthesis of lateral templates with various pore sizes, varying from 5 to 100 nm that can be used to grow single wall carbon nanotubes (SWNTs) and semiconductor nanowires (NWs). On the other hand, we have already shown the potential advantages (particularly in terms of mask count) of growing silicon nanowires inside lateral PAA templates for active matrix-type applications such as displays or x-ray image sensors [13,14]. Figure 1 shows the general scheme that we use to synthesize PAA membranes having their pore direction parallel to the surface of the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Here we present a systematic study of the synthesis of lateral templates with various pore sizes, varying from 5 to 100 nm that can be used to grow single wall carbon nanotubes (SWNTs) and semiconductor nanowires (NWs). On the other hand, we have already shown the potential advantages (particularly in terms of mask count) of growing silicon nanowires inside lateral PAA templates for active matrix-type applications such as displays or x-ray image sensors [13,14]. Figure 1 shows the general scheme that we use to synthesize PAA membranes having their pore direction parallel to the surface of the substrate.…”
Section: Introductionmentioning
confidence: 99%
“…Finally, we would like to point out that lateral membranes would also simplify the fabrication process of thin film transistors used in active matrix backplanes for addressing flat panel displays. In particular, only 4 masks would be needed for the fabrication of an active matrix liquid crystal display backplane (37), a mask number competitive with that of the current amorphous silicon technology.…”
Section: Discussionmentioning
confidence: 99%
“…This deposition method, patented [24,25], allowed fabricating wafers of CNTFETs with reproducible performances and with on/off current ratios of at least three orders of magnitude [26]. In order to perform a selective sensing we decided to fabricate an array of sensors composed by different metals as source and drain contacts (see patent [27]).…”
Section: Cntfets Gas Sensorsmentioning
confidence: 99%