Carbon nanotube field effect transistors for logic applications

Martel, Richard; Wong, H.-S. Philip; Chan, K.; Avouris, Phaedon

doi:10.1109/iedm.2001.979456

Cited by 63 publications

(44 citation statements)

References 9 publications

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“…Higher performance FETs could come from Silicon nanowires, which are fairly easy to grow and have properties that can be used in transistors (Schmidt et al 2006;Yoon et al 2006), and Carbon nanotubes, which are also commonly available and can make transistors (Martel et al 2001;Chen et al 2008). Assembly of these nanoscale objects into useful circuitry is a challenge.…”

Section: New Transistor Technologymentioning

confidence: 99%

Future Trends in Computing

Elmegreen¹

2010

Proc. IAU

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Abstract. According to a Top500.org compilation, large computer systems have been doubling in sustained speed every 1.14 years for the last 17 years. If this rapid growth continues, we will have computers by 2020 that can execute an Exaflop (10 18 ) per second. Storage is also improving in cost and density at an exponential rate. Several innovations that will accompany this growth are reviewed here, including shrinkage of basic circuit components on Silicon, three-dimensional integration, and Phase Change Memory. Further growth will require new technologies, most notably those surrounding the basic building block of computers, the Field Effect Transistor. Implications of these changes for the types of problems that can be solved are briefly discussed.

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Section: New Transistor Technologymentioning

confidence: 99%

Future Trends in Computing

Elmegreen¹

2010

Proc. IAU

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“…[17] In addition, previously fabricated Co-CNFET devices are found to be p-type. [18] Some differences between two types of devices are evident: First, contacts between metallic nanotubes and cobalt have near-perfect transparency (as high as 98%), while Cr/Au contacts have transmission below 80%. [19] Second, they behave differently in the electron accumulation regime.…”

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confidence: 99%

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

et al. 2002

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We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by cobalt electrodes. Scanning gate microscopy reveals that the bulk response of these devices is similar to gold-contacted p-CNFETs, confirming that Schottky barrier formation at the contact interface determines accessibility of electron and hole transport regimes. The transfer characteristics and Coulomb Blockade (CB) spectroscopy in ambipolar devices show strongly enhanced gate coupling, most likely due to reduction of defect density at the silicon/silicon-dioxide interface during hydrogen anneal. The CB data in the "on"-state indicates that these CNFETs are nearly ballistic conductors at high electrostatic doping. Due to their nanoscale capacitance, CNFETs are extremely sensitive to presence of individual charge around the channel. We demonstrate that this property can be harnessed to construct data storage elements that operate at the few-electron level.

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“…A comparison with state of the art Si-MOSFETs has first been attempted by Martel et al [67]. Their data, as deduced from a back-gate CNTFET with Ti/TiC sourcedrain contacts, already shows competitiveness to state-of-the-art Si-MOSFETs.…”

Section: Comparison Of Si-mosfets With Up-scaled Cnt-mosfetsmentioning

confidence: 99%

Electronic structure of carbon nanotubes

Lambin

2003

Comptes Rendus. Physique

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Carbon nanotube field effect transistors for logic applications

Cited by 63 publications

References 9 publications

Future Trends in Computing

Future Trends in Computing

Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors

Electronic structure of carbon nanotubes

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