Carbon nanotube–carbon nanotube contacts as an alternative towards low resistance horizontal interconnects

Santini, Claudia; Volodin, Alexander M.; Haesendonck, Chris Van; Gendt, Stefan De; Groeseneken, G.; Vereecken, Philippe M.

doi:10.1016/j.carbon.2011.05.041

Cited by 30 publications

(20 citation statements)

References 37 publications

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“…Additionally, the presence of metallic and semiconducting CNTs causes a Schottky barrier, which greatly suppresses the electrical transport in CNT networks [21]. Lack of efficient transport pathways due to the weak van der Waals contacts of CNTs, may significantly increase the overall film resistance by a factor as high as 10 [22,23].…”

Section: Introductionmentioning

confidence: 99%

Building interconnects in carbon nanotube networks with metal halides for transparent electrodes

Zhou

Shimada

Saito

et al. 2015

Carbon

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Section: Introductionmentioning

confidence: 99%

Building interconnects in carbon nanotube networks with metal halides for transparent electrodes

Zhou

Shimada

Saito

et al. 2015

Carbon

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“…Furthermore, Santini et al found that the contact resistance in a MWCNT/MWCNT contact was always below the MWCNT/metal contact resistance for all the different nanotube diameters tested, therefore showing great potential to be used as horizontal interconnects. [35] The transfer mechanisms involved in the process at the interface are still a topic of discussion within the community. There are approaches in which a single CNT is contacted by metal oxides at either end, building a transistor.…”

Section: Resultsmentioning

confidence: 99%

Influence of the Reinforcement Distribution and Interface on the Electronic Transport Properties of MWCNT‐Reinforced Metal Matrix Composites

et al. 2016

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The transition toward an electricity-driven world is testing electrical contact materials to their limits. Specifically, new alternatives are needed where composites that sacrificed conductivity in exchange for reduced weldability and higher heat dissipation sufficed. Carbon nanotubes (CNT) have the potential to close the gap as ideal fillers due to their outstanding intrinsic properties, pushing the application limits further. However, the reported electrical conductivity measurements show no clear tendency. In the present study, the authors attempt to shed some light on this matter by focusing on the causes behind those results. It is observed that the addition of 1 wt% CNT improves the conductivity of nickel, followed by a drop for higher concentrations, measured by four-point probe testing. Six nanotube orientation models describing different CNT arrangements are contrasted to the experimental data. Corrected values for nickel and CNT resistivities effectively place that of the composites close to the models, providing indications of a preferential orientation. It is concluded that, in contrast to what is widely reported, the main contributing factors to the resistivity are inter-tube coupling, porosity, and interfacial scattering, whereas clustering marginally influences the behavior.

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“…In the side contact configuration, the CNT side wall is physisorbed to a metal, 6 while in the end contact configuration, an open end of the CNT directly bonds to the metal. 7 In this work, focus is placed on the end contact configuration, whereby the open end of a CNT is chemically bonded to a metal surface. The metal used in the contact can determine whether an Ohmic (linear current-voltage (IV) relationship) or Schottky (rectifying current-voltage characteristic) contact is formed.…”

Section: Formation Of Contacts Between Doped Carbon Nanotubes and Alumentioning

confidence: 99%

Formation of contacts between doped carbon nanotubes and aluminum electrodes

Jones¹,

Greer²

2013

Journal of Applied Physics

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A theoretical study of the a semiconducting carbon nanotube (CNT) bonding to an aluminum electrode is presented using density functional theory to determine the electronic structure, and charge transport across the junction is studied using non-equilibrium Green's functions. The properties of CNT-metal junctions are of interest for optimizing metal-semiconductor junctions for Schottky barrier transistors and for the formation of Ohmic contacts for nanoelectronics. We first consider the properties of an undoped (16,0) CNT bonded to an aluminum electrode, including an analysis of metal induced gap states and examination of the surface dipole. The junction is then modified by introduction of substitutional dopants into the CNT using nitrogen and boron to form n- and p-type semiconductors, respectively, and the resulting impact of the doping on current transport across the junctions is calculated. As an alternative doping strategy, tetrathiafulvalene is introduced endohedrally and found to act as an n-type dopant in agreement with previous experimental studies. From electron transmission and current voltage characteristics, it is found that the doped junctions can be engineered to have much lower onset resistances relative to the undoped junction. It is found that the current-voltage characteristics display increased resistance for larger forward and reverse biases: For one polarity, the resistance increase is associated with the introduction of the CNT band gap into the voltage bias window, whereas for the opposing voltage polarity, the resistance increase is due to large charge carrier-substitutional dopant scattering. For the case of the endohedral doping scheme, it is found that the carrier-dopant scattering is effectively absent. (C) 2013 AIP Publishing LLC

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Carbon nanotube–carbon nanotube contacts as an alternative towards low resistance horizontal interconnects

Cited by 30 publications

References 37 publications

Building interconnects in carbon nanotube networks with metal halides for transparent electrodes

Building interconnects in carbon nanotube networks with metal halides for transparent electrodes

Influence of the Reinforcement Distribution and Interface on the Electronic Transport Properties of MWCNT‐Reinforced Metal Matrix Composites

Formation of contacts between doped carbon nanotubes and aluminum electrodes

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