Carbon Nanoparticles on Carbon Fabric for Flexible and High‐Performance Field Emitters

Abstract

Carbon nanoparticles (CNPs) are grown on flexible carbon fabric via a simple and low‐cost flame synthesis process. The entire struture of the carbon fabric substrate retains its high flexibility after the growth of CNPs and can even be rolled‐up and twisted to a large degree without affecting the electric characteristics. No appreciable changes in the conductance can be observed under different bending curvatures after hundreds of bending cycles. The thermal conductivity of the carbon fabric with CNPs is about 2.34 W m−1 K−1, about one order of magnitude higher than that of most polymer substrates. The field emitter fabricated using the structure has a low threshold electric field of around 2.8 V μm−1, and a high field emission current density of 108 mA cm−2, which is about two to four orders of magnitude higher than that of most polymer substrate‐based flexible CNT field emitters. These results indicate that CNPs on carbon fabric have potential applications in flexible electronics devices and displays.

Flexible Solid-State Supercapacitors Based on Carbon Nanoparticles/MnO2 Nanorods Hybrid Structure

“…25,26 The obtained CNPs, with a diameter of about 7 nm, form a nanoporous structure on a carbon fabric substrate. 26 Then MnO 2 nanorods were electrodeposited onto the CNPs. 27 Second, two strips of carbon fabric with a CNPs/MnO 2 nanorods hybrid structure on them were immersed into PVA/ H 3 PO 4 aqueous solution and solidified together thereafter, with a separator sandwiched between them (experimental details are provided in the Method section).…”

“…The flexible solid-state supercapacitor was fabricated through a two-step approach. First, CNPs were grown on carbon fabric through a simple and low-cost flame synthesis method. , The obtained CNPs, with a diameter of about 7 nm, form a nanoporous structure on a carbon fabric substrate . Then MnO 2 nanorods were electrodeposited onto the CNPs .…”

Spatio-Temporal Analysis of Anesthetics in Mice by Solid-Phase Microextraction: Dielectric Barrier Discharge Ionization Mass Spectrometry

“…To generate an SPME probe, tungsten wire was coated with a carbonaceous material by a simple and low-cost flame-based preparation process. The generation of carbon nanoparticles (CNPs) on a stainless steel wire by a similar procedure has been reported in the literature . The nature of the substrates was found to have little effect on this process, so we chose to use a hard tungsten wire, which has a higher melting point and better wear resistance as the support of carbon materials, to improve the durability of the SPME probe.…”

“…The generation of carbon nanoparticles (CNPs) on a stainless steel wire by a similar procedure has been reported in the literature. 31 The nature of the substrates was found to have little effect on this process, 27 so we chose to use a hard tungsten wire, which has a higher melting point and better wear resistance as the support of carbon materials, to improve the durability of the SPME probe. Probes coated with carbonaceous matter were prepared by the flame method using tungsten wire as the carrier.…”

Temperature-Dependent Field Emission Properties of 3C-SiC Nanoneedles

“…Interestingly, these curves shows the same characteristics: i) all the curves remain horizontal with emission current density of zero at the beginning stage; ii) when the applied electric field is beyond a certain value, the current density increased nearly exponentially with the increase of applied electric field. At RT, the E to of SiCNNs is 1.30 V/μm, which is lower than most works ever reported 8 and other inorganic semiconductor nanostructures, 2,17 such as ZnO nanoneedles (2.5 V/μm), 18 ZnS nanobelts (3.47 V/μm), 19 WO 3 nanotips (2.0 V/μm), 20 AlN nanoneedles (2.0 V/μm), 21 Si nanotip arrays (8.5 V/μm), 22 C nanoparticle on carbon fabric (1.33 V/μm), 23 and beaklike SnO 2 nanorods (8.5 V/μm). 24 When increasing the temperature from RT to 500 °C, the turn-on field obviously decreases from 1.30 to 0.66 V/μm (shown as the black curve in part b of Figure 4) suggesting that E to of SiCNNs decreases with the increase of temperature.…”