Carbon incorporation during growth of GaAs by TEGa-AsH3 base low-pressure metalorganic chemical vapor deposition

Abstract

Heavily carbon-doped GaAs (1×1018∼1×1020 cm−3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CCl4 flow rates. Dopant concentration first increased from 550 °C and reached a maximum at 570 °C growth temperature (Tg) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at Tg=590 °C or less than 40 at Tg=630 °C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2° off toward <110≳ misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3×1020 cm−3 at Tg=580 °C and V/III=10.

Zinc doped GaAs epitaxial layers MOVPE grown by liquid metalorganic sources

“…[20][21][22]); at the highest doping level, the mobility of the Zinc doped samples tends to diminish, as usually observed, and attributed to an increased compensation ratio. On the other hand, the Carbon intrinsically-doped samples show a mobility comparable with the ones of samples grown by using traditional precursors and/or doped through an external Carbon source, see for example [22][23][24], only slightly lower than the data of Enquist [24]. In the insert of Fig.…”

p-type doping of GaAs nanowires using carbon

“…This low selfcompensation is reported to lead to a higher Hall mobility for C-doped GaAs films compared to Zn-doped GaAs. 7 Previously, we have reported the striking effect of CBr 4 on the morphology of GaAs NWs grown by the vapour-liquid-solid (VLS) mechanism using ethyl-based group III precursors. 8 However, the electrical properties of C-doped GaAs NWs have been scarcely investigated.…”