Carbon hard masks for etching sub-90nm structures

Pears, Kevin A.; Stavrev, M.; Scire, Alessia; Koepe, Ralf; Markert, M.; Egger, Ulrich; Donohue, L.A.

doi:10.1016/j.mee.2005.05.002

Cited by 10 publications

(8 citation statements)

References 1 publication

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“…[11][12][13][14][15][16] Carbon hard masks combined with a thin dielectric capping layer enable to pattern very thin resist films ͑below 100 nm͒, which enable the fabrication of sub-50-nm and very dense patterns, with a good degree of reproducibility. 11,12,17 For this study, the carbon hard mask was capped with a thin silicon oxide layer ͑Fig.…”

Section: B Amorphous Carbon Hard Mask Techniquementioning

confidence: 99%

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Pauliac-Vaujour

Comboroure

Vizioz

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inBandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations J. Appl. Phys. 109, 064312 (2011); 10.1063/1.3559265 Low-frequency noise in strained SiGe core-shell nanowire p-channel field effect transistors Appl. Phys. Lett. 97, 073505 (2010); 10.1063/1.3480424Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching

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Section: B Amorphous Carbon Hard Mask Techniquementioning

confidence: 99%

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Pauliac-Vaujour

Comboroure

Vizioz

et al. 2008

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

show abstract

“…13,14 In fact, they are compatible with other materials and processes currently used in semiconductor industry and can also be removed very easily by O 2 plasma. 13,14 In fact, they are compatible with other materials and processes currently used in semiconductor industry and can also be removed very easily by O 2 plasma.…”

Section: B Mask Materialsmentioning

confidence: 99%

Sub-30-nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors

Pauliac-Vaujour

Brianceau

Landis

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inOn the role of Coulomb scattering in hafnium-silicate gated silicon n and p-channel metal-oxide-semiconductorfield-effect-transistors Low frequency noise analysis in Hf O 2 ∕ Si O 2 gate oxide fully depleted silicon on insulator transistors Scalable gate first process for silicon on insulator metal oxide semiconductor field effect transistors with epitaxial high-k dielectrics J. Vac. Sci. Technol. B 24, 710 (2006); 10.1116/1.2180256 Sub-100 nm silicon on insulator complimentary metal-oxide semiconductor transistors by deep ultraviolet optical lithography J.

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“…[6][7][8] Among the various hard mask materials, amorphous carbon layer (ACL) has been widely used due to the high etch selectivity over a photoresist and Si-based materials, easy deposition, and easy removal after the dry etch process. [9][10][11][12] However, the etching of ACL using conventional oxygen chemistry tends to show non-ideal etch profiles such as bowing, necking, taping, and increased top/bottom open CD ratio. 13 Therefore, various additive gases such as N 2 , H 2 , HBr, etc.…”

Section: Introductionmentioning

confidence: 99%

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O2/N2/CHF3 Plasma

Jeon¹,

Park²,

Yun³

et al. 2015

j nanosci nanotechnol

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The amorphous carbon layer (ACL), used as the hardmask for the etching of nanoscale semi-conductor materials, was etched using O2/CHF3 in addition to O2/N2 using pulsed dual-frequency capacitively coupled plasmas, and the effects of source power pulsing for different gas combinations on the characteristics of the plasmas and ACL etching were investigated. As the etch mask for ACL, a patterned SiON layer was used. The etch rates of ACL were decreased with the decrease of pulse duty percentage for both O2/N2 and O2/CHF3 due to decrease of the reactive radicals, such as F and O, with decreasing pulse duty percentage. In addition, at the same pulse duty percentage, the etch selectivity of ACL/SiON with O2/CHF3 was also significantly lower than that with O2/N2. However, the etch profiles of ACL with O2/CHF3 was more anisotropic and the etch profiles were further improved with decreasing the pulse duty percentage than those of ACL with O2/N2. The improved anisotropic etch profiles of ACL with decreasing pulse duty percentage for O2/CHF3 were believed to be related to the formation of a more effective passivation layer, such as a thick fluorocarbon layer, on the sidewall of the ACL during the etching with O2/CHF3, compared to the weak C-N passivation layer formed on the sidewall of ACL when using O2/N2.

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Carbon hard masks for etching sub-90nm structures

Cited by 10 publications

References 1 publication

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Hybrid high resolution lithography (e-beam/deep ultraviolet) and etch process for the fabrication of stacked nanowire metal oxide semiconductor field effect transistors

Sub-30-nm hybrid lithography (electron beam∕deep ultraviolet) and etch process for fully depleted metal oxide semiconductor transistors

Etch Properties of Amorphous Carbon Material Using RF Pulsing in the O<SUB>2</SUB>/N<SUB>2</SUB>/CHF<SUB>3</SUB> Plasma

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