Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

Verdy, Anthonin; Navarro, G.; Bernard, M.; Chevalliez, S.; Castellani, N.; Nolot, Emmanuel; Garrione, J.; Noé, Pierre; Bourgeois, G.; Sousa, V.; Cyrille, Marie-Claire; Nowak, E.

doi:10.1109/irps.2018.8353635

Cited by 23 publications

(22 citation statements)

References 19 publications

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“…The latter enabled the advent of high-density 3D nonvolatile resistive memories because of the association of a PCM element and an OTS selector, both based on chalcogenide materials (4,5,13). In that context, we have shown that tailoring the amorphous structure of GS-based thin films by N and Sb incorporation produces highly performant OTS materials, as demonstrated in selector devices (16)(17)(18)24). Because of the investigation of amorphous structure of prototypical chalcogenide thin films coupled with analysis of their electronic properties and their OTS behavior upon electric field application, we made it possible to draw design rules to optimize further the OTS properties of amorphous chalcogenides.…”

Section: Resultsmentioning

confidence: 99%

“…The GSSN thus ideally combines a well-adapted V th and low leakage current (16), as well as a high stability and cycle endurance (17), while being fully compatible with current CMOS technological processes [back end of line (BEOL) compatibility] (18).…”

Section: Downloaded Frommentioning

confidence: 99%

“…In this work, we show how innovative As-free amorphous OTS thin films based on Se-rich GeSe glasses permit to achieve state-ofthe-art OTS devices (16)(17)(18) with outstanding performance, such as well-adapted threshold voltage V th , low subthreshold leakage current (I OFF ), and high endurance. In contrast to Ge-rich (19) or Sb-doped GeSe-based (20) OTS thin films, our Sb-and N-doped GeSe materials provide an ideal compromise between a high stability against crystallization, low V th , and limited subthreshold currents that are critical for the development of higher-density and less-consuming 3D memories (1,4,5,13).…”

Section: Introductionmentioning

confidence: 99%

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

et al. 2020

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Fifty years after its discovery, the ovonic threshold switching (OTS) phenomenon, a unique nonlinear conductivity behavior observed in some chalcogenide glasses, has been recently the source of a real technological breakthrough in the field of data storage memories. This breakthrough was achieved because of the successful 3D integration of so-called OTS selector devices with innovative phase-change memories, both based on chalcogenide materials. This paves the way for storage class memories as well as neuromorphic circuits. We elucidate the mechanism behind OTS switching by new state-of-the-art materials using electrical, optical, and x-ray absorption experiments, as well as ab initio molecular dynamics simulations. The model explaining the switching mechanism occurring in amorphous OTS materials under electric field involves the metastable formation of newly introduced metavalent bonds. This model opens the way for design of improved OTS materials and for future types of applications such as brain-inspired computing.

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Section: Resultsmentioning

confidence: 99%

Section: Downloaded Frommentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

et al. 2020

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“…Furthermore, both of the line scan and mapping results indicate that the element Ti was injected into lithium silicate layer, which is similar to the results of previous work with TiN as electrode. [42] It should be noted that the Li element is hard to be observed by EDS analysis due to the ultrasoft Li K X-ray at around 55 eV. [43] To understand the switching mechanism, the device operated at I cc = 100 µA is characterized by HRTEM, as shown in Figure 2d.…”

Section: The Sensory Nervous System (Sns) Builds Up the Association Bmentioning

confidence: 99%

A Habituation Sensory Nervous System with Memristors

Shi

et al. 2020

Advanced Materials

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The sensory nervous system (SNS) builds up the association between external stimuli and the response of organisms. In this system, habituation is a fundamental characteristic that filters out irrelevantly repetitive information and makes the SNS adapt to the external environment. To emulate this critical process in electronic devices, a LixSiOy‐based memristor (TiN/LixSiOy/Pt) is developed where the temporal response under repetitive stimulation is similar to that of habituation. By connecting this synaptic device to a leaky integrate‐and‐fire neuron based on a Ag/SiO2:Ag/Au memristor, a fully memristive SNS with habituation is experimentally demonstrated. Finally, a habituation spiking neural network based on the SNS is built and its application in obstacle avoidance for robot navigation is successfully presented. The results provide that a direct emulation of the biologically inspired learning process by memristors could be a sound choice for neuromorphic hardware implementation.

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“…Carbon was preferred as the interface metal because of its low tendency to react with chalcogenides. 33 Details about the fabrication process are available in the methods section. A schematic of the devices tested is shown in Figure 3a.…”

mentioning

confidence: 99%

ALD Heterojunction Ovonic Threshold Switches

Adinolfi

Laudato

Clarke

et al. 2020

ACS Appl. Electron. Mater.

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Conformal atomic layer deposition (ALD) of chalcogenide films would enable aggressive 3D integration of nonvolatile memories; unfortunately, the fabrication of high-performance ALD OTSs remains an unsolved problem. Here we present an ALD process to incorporate As in a quaternary GeAsSeTe (GAST) film showing excellent conformality, controllable thickness, and composition homogeneity. The films were used to produce a GeSe/GAST heterojunction-OTS selector. We demonstrate low leakage current (∼10–9 A over a 0.01 μm2 area measured at VTH/2), a VTH ∼ 3 V, a switching time of ∼2 nsand an outstanding endurance exceeding 109 cycleson par with the current OTS state-of-the-art.

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Carbon electrode for Ge-Se-Sb based OTS selector for ultra low leakage current and outstanding endurance

Cited by 23 publications

References 19 publications

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

Toward ultimate nonvolatile resistive memories: The mechanism behind ovonic threshold switching revealed

A Habituation Sensory Nervous System with Memristors

ALD Heterojunction Ovonic Threshold Switches

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