Carbon doping of non-polar cubic GaN by CBr4

As, D. J.; Tschumak, E.; Pöttgen, H.; Kasdorf, Olga; Gerlach, Jürgen W.; Karl, H.; Lischka, K.

doi:10.1016/j.jcrysgro.2008.11.013

Cited by 4 publications

(2 citation statements)

References 12 publications

(14 reference statements)

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“…On the other hand, theoretical and experimental studies of carbon (C)-doped GaN have been reported [4][5][6]. The optical and electrical characteristics of carbon doping of non-polar cubic GaN was researched [7]. C-doped GaN layers were grown by RF-plasma-assisted molecular beam epitaxy (MBE) on conducting free-standing 3C-SiC (001) substrate.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

Kim¹,

Lee²,

Naoi

et al. 2014

IJMSA

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The diffusion experiment of Al x Ga 1-x N (x = 0.00, 0.04, 0.45, 0.65, 0.86, 1.00) samples using a solid source of Al 4 C 3 layer was performed by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The Al x Ga 1-x N (x≦0.45) samples were proven to be a p-type. In second ion mass spectroscopy (SIMS) analysis, the carbon profile is different from the simple complementary error function, but is the double of the complementary error function, meaning AlC or AlCO plus C. The diffusion length (L) was drastically decreased by increasing Al. The diffusion coefficient (D) was also calculated as a function of Al mole fraction.

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Section: Introductionmentioning

confidence: 99%

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

Kim¹,

Lee²,

Naoi

et al. 2014

IJMSA

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“…CBr 4 is commonly used as a dopant during the MOVPE of III-V compounds [8][9][10] and is preferred to CCl 4 because of the lower bond strengths of C-Br relative to C-Cl (56.2 kcal/mol for CBr 4 , 73 kcal/mol for CCl 4 ). Although CBr 4 was used to deposit policrystalline 3C-SiC on Si at low pressure and temperature with the aid of UV irradiation and good quality micromechanical structures were obtained by this method [11,12], its use in SiC growth is not so common and there are very few papers on it. The aim of our work was to use CBr 4 to growth crystalline 3C-SiC/Si and to test it as an alternative precursor to C 3 H 8 .…”

Section: Introductionmentioning

confidence: 99%

CBr₄ as precursor for VPE growth of cubic silicon carbide

Watts¹,

Bosi

Attolini³

et al. 2010

Cryst. Res. Technol.

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This work presents a study of carbon tetrabromide (CBr 4 ) as precursor to deposit 3C-SiC on (001) and (111) Si by VPE technique at temperatures ranging between 1000 °C and 1250 °C. TEM, AFM and SEM results indicate that the epitaxy proceeds as a 3D growth of uncoalesced islands at low temperature, whereas a continuous crystalline layer with hillocks on top is obtained above 1200 °C. The hillocks observed at high temperature appear well faceted and their shape and orientation are analyzed in detail by AFM, showing a {311} preferred orientation. 3D island growth was suppressed by adding C 3 H 8 to the precursor gases.

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N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

Himmerlich

Knübel

Aidam

et al. 2013

Journal of Applied Physics

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In this work, we have analyzed the effect of intentional carbon doping on molecular beam epitaxy grown In-polar InN epilayers using carbon bromide (CBr4) as dopant source. Hall effect measurements, high resolution X-ray diffraction, atomic force microscopy, transmission electron microscopy, secondary ion mass spectrometry, spectroscopic ellipsometry, as well as X-ray photoelectron spectroscopy were employed to characterize the influence of different dopant concentrations on the electrical, optical, crystallographic, morphological, and electronic properties of InN. It was found that the electron concentration increases linearly with the incorporation of carbon pointing towards the effect of n-type doping and that incorporated C impurities reduce the electron mobility within the InN films. This correlation is further reflected in associated properties such as the onset of optical absorption, the plasmon frequency, the effective electron mass and the position of the bulk and surface Fermi level. Furthermore, it is found that the dislocation densities are independent of carbon incorporation, ruling them out as origin for the increased n-type conductivity and reduced carrier mobility in these epilayers

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Carbon doping of non-polar cubic GaN by CBr4

Cited by 4 publications

References 12 publications

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

CBr₄ as precursor for VPE growth of cubic silicon carbide

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

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Carbon doping of non-polar cubic GaN by CBr4

Cited by 4 publications

References 12 publications

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

High Temperature Diffusion in AlxGa1-xN and P-Type AlGaN by Al4C3

CBr4 as precursor for VPE growth of cubic silicon carbide

N-type conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy

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Product

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CBr₄ as precursor for VPE growth of cubic silicon carbide