Carbon-doped InP∕In0.53Ga0.47As single and double heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy

Abstract

Articles you may be interested inHigh performance Ga As Sb ∕ In P double heterojunction bipolar transistors grown by gas-source molecular beam epitaxy J. Vac. Sci. Technol. B 24, 1564 (2006); 10.1116/1.2190678 Study of direct current characteristics of carbon-doped GaInP/GaAs heterojunction bipolar transistor grown by solid source molecular beam epitaxy Properties of carbon-doped low-temperature GaAs and InP grown by solid-source molecular-beam epitaxy using CBr 4