Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Zhang, Zhaofu; Wang, Zhen; Guo, Yuzheng; Robertson, John

doi:10.1063/5.0037241

Cited by 23 publications

(13 citation statements)

References 41 publications

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“…Carbon atoms aggregate into carbon clusters as the oxide layer rises, eventually increasing the interface traps. This confirms that the rate of oxidation in N2O is significantly higher than that of the ambient NO, which explains the increased concentration of carbon clusters near the interface [44,45]. Moreover, because the fitting is based on Arrhenius plots for linear oxide growth in NO and N2O, the R 2 and MAPE values for this group of studies show 1 and 0 respectively.…”

Section: Uses Of Sic-mosfet Voltage Rating (V)supporting

confidence: 66%

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Hashim

Poobalan²,

Zakaria³

et al. 2023

Trends Sci

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This research has shown that the oxide thickness for silicon carbide (SiC) based wide materials can be predicted using regression techniques in wet/dry nitrided or wet/dry non-nitrided thermal oxidation process conditions for high voltage applications by employing 2 different regression techniques: Polynomial and linear regression. The R-squared (R2) and Mean Absolute Percentage Error (MAPE) techniques are used to evaluate the regression models. Furthermore, this work investigates and presents a calculation of gate oxide thickness that is correlated to gate voltage ranges for high voltage applications. In this work, the thermal oxidation process environment is classified into 3 different processing conditions: conventional (dry and wet), dry nitrided (NO,N2O), and wet nitrided (HNO3 vapour). The findings from this study showed that wet oxidation combined with nitrided elements can produce thicker and better-quality gate oxide as compared to conventional dry and wet oxidation techniques. The outcome of this work clearly shows that gate oxide thickness may be derived from silicon carbide-based wide-bandgap materials utilizing linear and polynomial approaches using thermal oxidation durations at different temperatures for high-power applications. The regression models and formulations produced in this work are expected to aid the researchers in determining appropriate oxide thickness under practicable process conditions, with the exception of real thermal oxidation process conditions. Hence, the outcome of this work is expected to save the processing time, material, and cost of the power semiconductor device fabrication technology, mainly for high voltage applications. HIGHLIGHTS Regression approaches are being used to determine the oxide thickness (Tox) for SiC-based broad materials in nitrided and non-nitrided thermal oxidation process conditions for high-voltage applications The regression models are assessed using the R-squared (R2) and Mean Absolute Percentage Error (MAPE) approaches The results of this work are anticipated to reduce processing time, material requirements, and manufacturing costs for power semiconductor devices used in high-voltage applications GRAPHICAL ABSTRACT

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Section: Uses Of Sic-mosfet Voltage Rating (V)supporting

confidence: 66%

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Hashim

Poobalan²,

Zakaria³

et al. 2023

Trends Sci

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“…One of the most important challenges that several studies are currently looking for a solution to is the carbon cluster formation in the SiC/SiO 2 interface [67]. Some studies have shown that the formation of carbon clusters in SiC-MOSFETs can cause a reduction in field-effect mobility of up to 100 cm 2 V −1 s −1 [68].…”

Section: Sic Technology Evolution and Future Trendsmentioning

confidence: 99%

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

et al. 2021

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At present, the energy transition is leading to the replacement of large thermal power plants by distributed renewable generation and the introduction of different assets. Consequently, a massive deployment of power electronics is expected. A particular case will be the devices destined for urban environments and smart grids. Indeed, such applications have some features that make wide bandgap (WBG) materials particularly relevant. This paper analyzes the most important features expected by future smart applications from which the characteristics that their power semiconductors must perform can be deduced. Following, not only the characteristics and theoretical limits of wide bandgap materials already available on the market (SiC and GaN) have been analyzed, but also those currently being researched as promising future alternatives (Ga2O3, AlN, etc.). Finally, wide bandgap materials are compared under the needs determined by the smart applications, determining the best suited to them. We conclude that, although SiC and GaN are currently the only WBG materials available on the semiconductor portfolio, they may be displaced by others such as Ga2O3 in the near future.

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“…In the meantime, several first-principles calculations of defects near the SiO 2 /SiC interface have revealed that a (C-C) C defect at the interface, 72 ) a (C-C) Si defect inside SiC, 73 ) a C-ring defect inside SiO 2 , 74 ) and some other C-related defects have relatively low formation energy at a typical oxidation temperature (1200–1300 ℃) and these defects create electrically active levels in the bandgap near E c . Based on the SIMS results, the energy levels of interface defects, considering the quantum confinement effects, and the theoretical prediction mentioned above, it is presumed that thermal oxidation of SiC may inevitably induce generation of various C-related defects at and near the SiO 2 /SiC interface.…”

Section: Progress and Future Challenges Of Sic Power Mosfetsmentioning

confidence: 99%

High-voltage SiC power devices for improved energy efficiency

Kimoto

2022

Proc. Jpn. Acad., Ser. B

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Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si) devices in terms of high breakdown voltage, low power loss, and fast switching. This review briefly introduces the major features of SiC power devices and then presents research works on breakdown phenomena in SiC pn junctions and related discussion which takes into account the energy band structure. Next, recent progress in SiC metal-oxide-semiconductor field effect transistors, which are the most important unipolar devices, is described with an emphasis on the improvement of channel mobility at the SiO 2 /SiC interface. The development of SiC bipolar devices such as pin diodes and insulated gate bipolar transistors, which are promising for ultrahigh-voltage (>10 kV) applications, are introduced and the effect of carrier lifetime enhancement is demonstrated. The current status of mass production and how SiC power devices can contribute to energy saving are also described.

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Carbon cluster formation and mobility degradation in 4H-SiC MOSFETs

Cited by 23 publications

References 41 publications

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

The Modelling of SiC Gate Oxide Thickness based on Thermal Oxidation Temperatures and Durations for High-Voltage Applications

Role of Wide Bandgap Materials in Power Electronics for Smart Grids Applications

High-voltage SiC power devices for improved energy efficiency

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