Carbon as an acceptor in cubic GaN/3C–SiC

Zado, A.; Tschumak, E.; Gerlach, Jürgen W.; Lischka, K.; As, D. J.

doi:10.1016/j.jcrysgro.2010.12.044

Cited by 15 publications

(17 citation statements)

References 9 publications

(9 reference statements)

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“…Acceptors shallower than Mg observed at the interface between the semi-insulating p-AlGaN:Fe buffer and ''anomalous'' p-AlGaN:Mg films in Ref. [116] were somewhat tentatively ascribed to C. In cubic GaN, carbon has been shown to form a shallow acceptor state with a level near 0.215 eV from the valence band edge [142,143].…”

Section: Carbon In Ganmentioning

confidence: 96%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

209

177

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Section: Carbon In Ganmentioning

confidence: 96%

Deep traps in GaN-based structures as affecting the performance of GaN devices

Polyakov

Lee

2015

Materials Science and Engineering: R: Reports

209

177

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“…[5] Residual conductivity is often observed in GaN grown by MBE. [6,7] Oxygen has been identified as a main source of unintentional background impurities leading to n-type conductivity. [8]…”

Section: Introductionmentioning

confidence: 99%

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Schubert

Wirth

Zimmermann

et al. 2016

Science and Technology of Advanced Materials

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Growth conditions have a tremendous impact on the unintentional background impurity concentration in gallium nitride (GaN) synthesized by molecular beam epitaxy and its resulting chemical and physical properties. In particular for oxygen identified as the dominant background impurity we demonstrate that under optimized growth stoichiometry the growth temperature is the key parameter to control its incorporation and that an increase by 55 °C leads to an oxygen reduction by one order of magnitude. Quantitatively this reduction and the resulting optical and electrical properties are analyzed by secondary ion mass spectroscopy, photoluminescence, capacitance versus voltage measurements, low temperature magneto-transport and parasitic current paths in lateral transistor test structures based on two-dimensional electron gases. At a growth temperature of 665 °C the residual charge carrier concentration is decreased to below 1015 cm−3, resulting in insulating behavior and thus making the material suitable for beyond state-of-the-art device applications.

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“…Thus the serial resistivity is increased to a maximum. At the adjusted carbon flux we expect a decrease of the donor density by one order of magnitude [3]. Thus the conduction band edge of the c-GaN QWs is 0.08 eV above the Fermi level on the energetic scale.…”

Section: Contributedmentioning

confidence: 94%

“…One way to electrically separate the active device from the substrate is the incorporation of a c-AlN barrier layer, due to a large conduction band discontinuity between c-GaN and c-AlN of 1.4 eV [2]. Another possibility is to compensate unintentionally doped c-GaN by carbon, which reduces the c-GaN conductance by two orders of magnitude at an appropriate carbon flux [3,[4][5][6].…”

mentioning

confidence: 99%

Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C‐SiC substrates

Zado

2013

Phys. Status Solidi C

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In this work we present a novel method of the electrical separation of the substrate and the hetero junction field effect transistor device. For the epitaxial growth of our structures free standing 3C‐SiC (001) substrates with a free carrier concentration of n=2.7×1018 cm‐3 and a resistivity of ρ=34 mΩcm were used. On a 50 nm c‐GaN buffer layer an asymmetric multi quantum well structure consisting of 5 periodes of two cubic GaN:C asymmetric QWs (1 nm and 2 nm) embed‐ded between 3 nm thick c‐AlN:C barriers. A 50 nm c‐GaN cap layer completes the sample structure. A detailed conduction band profile and the quantized electron states within the asymmetric quantum well were calculated using a 1D Poisson‐Schrödinger‐solver. The structural properties were analyzed by atomic force microscopy and high resolution x‐ray diffraction. Current‐voltage measurements of these structures showed an increase of the serial resistivity by six orders of magnitude (from 5 mΩ to 8 kΩ) compared to an unstructured c‐GaN reference sample. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Carbon as an acceptor in cubic GaN/3C–SiC

Cited by 15 publications

References 9 publications

Deep traps in GaN-based structures as affecting the performance of GaN devices

Deep traps in GaN-based structures as affecting the performance of GaN devices

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN

Carbon doped asymmetric cubic AlN/GaN multi quantum well structures for high electrical isolation to 3C‐SiC substrates

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