Carbon acceptors and carbon-hydrogen complexes in AlSb

McCluskey, M. D.; Häller, E. E.; Becla, P.

doi:10.1103/physrevb.65.045201

Cited by 25 publications

(20 citation statements)

References 20 publications

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“…7 In addition, unintentional dopants such as carbon and oxygen have been shown to affect the Fermi level significantly. 2,8 Carbon is a commonly found acceptor in AlSb, giving rise to p-type conductivity to the as-grown AlSb samples. 8 Oxygen increases the resistivity, but it also decreases the carrier mobility in AlSb significantly, which is detrimental to the detector performance.…”

Section: Introductionmentioning

confidence: 99%

Defects in AlSb: A density functional study

2009

Phys. Rev. B

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We carry out density functional calculations to study both intrinsic and extrinsic defects in AlSb. We focus on the carrier compensation and trapping properties of these defects, which are important to the radiation detection applications. We show that the Sb antisite ͑Sb Al ͒ is a low-energy defect, with interesting property of light-induced metastability, similar to the As antisite in GaAs. Sb Al is effective in compensating holes induced by the residual carbon but is also a deep electron trap that reduces the carrier drifting length. We discuss the possibility of using hydrogenated isovalent N impurity in AlSb and GaAs to pin the Fermi level without causing efficient carrier trapping.

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Section: Introductionmentioning

confidence: 99%

Defects in AlSb: A density functional study

2009

Phys. Rev. B

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“…This observation is in agreement with Hall and resistivity measurements. [22][23][24] Within the error bars of our calculations the 0 / −1 equilibrium transition levels for C, Si, and Ge coincide with the VBM whereas for Sn the equilibrium transition level is located 0.1 eV above the VBM ͑compare Fig. 3͒.…”

Section: A Group IV Elements: C Si Ge and Snmentioning

confidence: 84%

Extrinsic point defects in aluminum antimonide

2010

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We investigate thermodynamic and electronic properties of group IV (C, Si, Ge, Sn) and group VI (O, S, Se, Te) impurities as well as P and H in aluminum antimonide (AlSb) using first-principles calculations. To this end, we compute the formation energies of a broad range of possible defect configurations including defect complexes with the most important intrinsic defects. We also obtain relative scattering cross strengths for these defects to determine their impact on charge carrier mobility. Furthermore, we employ a self-consistent charge equilibration scheme to determine the net charge carrier concentrations for different temperatures and impurity concentrations. Thereby, we are able to study the effect of impurities incorporated during growth and identify optimal processing conditions for achieving compensated material. The key findings are summarized as follows. Among the group IV elements, C, Si, and Ge substitute for Sb and act as shallow acceptors, while Sn can substitute for either Sb or Al and displays amphoteric character. Among the group VI elements, S, Se, and Te substitute for Sb and act as deep donors. In contrast, O is most likely to be incorporated as an interstitial and predominantly acts as an acceptor. As a group V element, P substitutes for Sb and is electrically inactive. C and O are the most detrimental impurities to carrier transport, while Sn, Se, and Te have a modest to low impact. Therefore, Te can be used to compensate C and O impurities, which are unintentionally incorporated during the growth process, with minimal effect on the carrier mobilities.Comment: 12 pages, 12 figure

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“…Thermal diffusivity values of bulk AlSb and elemental Sb and the volume fractions obtained by taking into account the interfacial component will be considered. The weighted value of the thermal diffusivity is written as sample = x˛A lSb + y˛i nt + z˛S b (8) where x = 0.50, y = 0.32, z = 0.18,˛A lSb = 0.40 × 10 −4 m 2 /s, and Sb = 0.17 × 10 −4 m 2 /s. Using these values in Eq.…”

Section: Pas Measurementsmentioning

confidence: 99%

“…AlSb can be produced using several techniques [8][9][10], including mechanical alloying (MA). MA is an efficient technique to synthesize many unique materials such as nanostructured alloys, amorphous alloys, and metastable solid solutions [11][12][13].…”

Section: Introductionmentioning

confidence: 99%