Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors

Schneider, Harald; Koidl, P.; Schönbein, C.; Ehret, S.; Larkins, E. C.; Bihlmann, G.

doi:10.1006/spmi.1996.0038

Cited by 23 publications

(10 citation statements)

References 22 publications

(31 reference statements)

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“…The increase of the electron sheet concentration resulting in the elevation of the Fermi level also leads to the decrease of the activation energy. Hence, when thermo-emission is the dominant mechanism, 14,[27][28][29] the rate of electron escape from the QW can be presented as…”

Section: Device Model and Main Equationsmentioning

confidence: 99%

“…From eq. (14) for the dark current density as a function of the average electric field (i.e., the bias voltage) and structural parameters one obtains…”

Section: Dark Currentmentioning

confidence: 99%

“…Using eqs. (12) and (14), one can obtain the value of the self-consistent electric field in the nth barrier as:…”

Section: Derivation Of the Electric-field And Space-charge Distributionsmentioning

confidence: 99%

“…Different models have been proposed for steady-state and transient processes in QWIPs. [4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19] Early models of QWIPs with multiple QWs are based on the assumption that the electric-field distribution in the active region is uniform. 4,5) Such simple QWIP models assume a perfectly injecting emitter contact, 5) i.e., the contact injects as many electrons as needed by the QW structure.…”

Section: Introductionmentioning

confidence: 99%

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Contact and Space-Charge Effects in Quantum Well Infrared Photodetectors

Ryzhii¹,

Liu

1999

Jpn. J. Appl. Phys.

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We present the results of a new self-consistent analytical model for the calculation of the dark current and the electric-field and space-charge distributions in quantum well infrared photodetectors (QWIPs). This model takes into account thermionic emission from the QWs, tunneling injection of electrons from the emitter contact, transport of the excited and injected electrons across an active region of a QWIP and their capture into the QWs. It is shown that the electric-field and space-charge distributions in the QW structure are nonuniform in general. The character of their nonuniformity is determined by the relationships between the structural parameters, parameters of elementary processes, and bias voltage.

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Section: Device Model and Main Equationsmentioning

confidence: 99%

“…From eq. (14) for the dark current density as a function of the average electric field (i.e., the bias voltage) and structural parameters one obtains…”

Section: Dark Currentmentioning

confidence: 99%

“…Using eqs. (12) and (14), one can obtain the value of the self-consistent electric field in the nth barrier as:…”

Section: Derivation Of the Electric-field And Space-charge Distributionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Contact and Space-Charge Effects in Quantum Well Infrared Photodetectors

Ryzhii¹,

Liu

1999

Jpn. J. Appl. Phys.

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“…3 and 24). The rate of electron emission from a QW in the dark condition at elevated temperatures as a function of the total electric field can be expressed as 33,34) …”

Section: Effect Of Qw Doping Asymmetrymentioning

confidence: 99%

Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors

Ryzhii

Willander

1999

Jpn. J. Appl. Phys.

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The effect of donor space charge on electron capture processes in AlGaAs/GaAs multiple quantum well infrared photodetectors (QWIPs) is studied using an ensemble Monte Carlo (MC) particle modeling. It is shown that the corrugation of the conduction band edge due to donor charges in the inter-QW barriers strongly influences the electron distribution over energies and the electric-field dependence of the electron capture rate. Vertical nonuniformity of the donor distributions in QWs results in an asymmetry in the electric-field dependence of the capture parameter. This effect can essentially contribute to the asymmetry in the QWIP current-voltage characteristics in the dark condition and under illumination.

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4.2.2.1.8 Dynamic properties of excitons, biexcitons and trions

Klingshirn¹

Landolt-Börnstein - Group III Condensed Matter

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Capture dynamics and far-infrared response in photovoltaic quantum well intersubband photodetectors

Cited by 23 publications

References 22 publications

Contact and Space-Charge Effects in Quantum Well Infrared Photodetectors

Contact and Space-Charge Effects in Quantum Well Infrared Photodetectors

Effect of Donor Space Charge on Electron Capture Processes in Quantum Well Infrared Photodetectors

4.2.2.1.8 Dynamic properties of excitons, biexcitons and trions

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