Capacitively Coupled Traveling-Wave Power Amplifier

Ayasli, Y.; Miller, Shawn W.; Mozzi, R. L.; Hanes, L.K.

doi:10.1109/tmtt.1984.1132918

Cited by 102 publications

(10 citation statements)

References 7 publications

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“…Generally, the simplified FET model has been used for the basic analysis and design of DAs [2,3,7,9,10]. The simplified FET model is shown in Figure-3 The geometric-center frequency of the band is…”

Section: Analysis Of the Bp-cssdamentioning

confidence: 99%

“…(7) changes because of R ds and R in . R in causes a shunt conductance at the input of the active device which increases with frequency [2]. The shunt conductance in the line caused by R in for each transistor can be approximated as…”

Section: Analysis Of the Bp-cssdamentioning

confidence: 99%

“…The multioctave behaviour of conventional distributed amplifier (CDA) makes it one of the most investigated and realized broadband circuits [1][2][3][4][5][6][7]. But the gain performance of CDA is limited to about 7-14 dB.…”

Section: Introductionmentioning

confidence: 99%

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Improving the Gain-Frequency Performance of Cascaded Single-Stage Distributed Amplifiers with Bandpass Filter Structure

Yazgi

Toker

2004

Analog Integrated Circuits and Signal Processing

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In this paper a bandpass filter structure is proposed for realizing the artificial transmission lines of cascaded singlestage distributed amplifiers (CSSDA) and the basic analysis and design of the bandpass structured CSSDA (BP-CSSDA) is demonstrated. Some of the lower frequency region in the gain-frequency band of CSSDA is lost because of the bias components. Using the bandpass structure for realizing the artificial transmission lines, this lost frequency region can be added to the upper limit of the gain-frequency band. Therefore, BP-CSSDA gives more bandwidth than CSSDA using the lowpass structured lines. The gain can be increased by increasing the interstage termination impedance (Z 0int ) without decreasing the bandwidth. A graphical method for determining the maximum Z 0int is introduced in this paper. The simulation results given in this paper show the advantage of using the BP structured artificial lines in CSSDA.

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Section: Analysis Of the Bp-cssdamentioning

confidence: 99%

Section: Analysis Of the Bp-cssdamentioning

confidence: 99%

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Improving the Gain-Frequency Performance of Cascaded Single-Stage Distributed Amplifiers with Bandpass Filter Structure

Yazgi

Toker

2004

Analog Integrated Circuits and Signal Processing

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“…2). Capacitive degeneration [3] provides higher bandwidth at lower gain with constant gain-bandwidth product. To obtain sufficiently high PAE (up to 40%), gains 10 dB are required, limiting bandwidth to .…”

Section: Circuit Designmentioning

confidence: 99%

“…Conventional distributed amplifiers with reverse termination have poor efficiency due to the drain-line reverse wave. Reported monolithic distributed power amplifiers typically have 10% to 15% PAE [3], [4]. Distributed amplifiers using tapered impedance drain-lines can in theory provide efficiencies up to the class-A limit of 50%, by eliminating the reverse termination [5], [6].…”

Section: Introductionmentioning

confidence: 99%

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

Krishnamurthy

Vetury

Keller

et al. 2000

IEEE J. Solid-State Circuits

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Abstract-We report 0.2 to 6-GHz MMIC power amplifiers with 12-dB gain, over 23-dBm output power, and more than 25% power-added efficiency (PAE) in a GaAs MESFET technology offering 18-GHz and 12-V breakdown. These circuits have gain-bandwidth products of 1 3and are more efficient than distributed power amplifiers. A first demonstration of similar circuits in GaN/AlGaN HEMT technology yielded 11-dB gain, 0.2 to 7.5-GHz bandwidth amplifiers with over 31.5-dBm output power and up to 15% PAE. With improved devices and models we expect significantly higher power from the GaN HEMT circuits.

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Large signal design method of distributed power amplifiers applied to a 2–18-GHz GaAs chip exhibiting high power density performances

Campovecchio¹,

Bras²,

Hilal³

et al. 1996

Int. J. Microw. Mill.-Wave Comput.-Aided Eng.

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A suitable large signal design method of distributed power amplifiers, based on the optimum FET load requirement for high power operation, is proposed in this article. The gate and drain line characteristic admittances are determined, providing both the initial values and right directions for an optimum design. To validate the proposed design method, a FET amplifier demonstrator with a gate periphery of 1.2 mm has been manufactured at the Texas Instruments foundry. The MMIC distributed amplifier demonstrated an improved power density performance of 340 mW/mm over the 2–18‐GHz frequency band associated with a minimum of 13% power‐added efficiency and 24% drain efficiency at 1‐dB compression in CW operation. © 1996 John Wiley & Sons, Inc.

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Capacitively Coupled Traveling-Wave Power Amplifier

Cited by 102 publications

References 7 publications

Improving the Gain-Frequency Performance of Cascaded Single-Stage Distributed Amplifiers with Bandpass Filter Structure

Improving the Gain-Frequency Performance of Cascaded Single-Stage Distributed Amplifiers with Bandpass Filter Structure

Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

Large signal design method of distributed power amplifiers applied to a 2–18-GHz GaAs chip exhibiting high power density performances

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