Capacitive probing of electronic phase separation in an oxide two-dimensional electron system

Smink, Sander; Boschker, Hans; Brinkman, Alexander; Mannhart, J.; Hilgenkamp, H.

doi:10.1103/physrevb.106.054205

Cited by 2 publications

(1 citation statement)

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“…They were then thermally treated in the growth chamber in ultrahigh vacuum at 1800 °C for 5 min, which induces step doubling on the sapphire surface. 25 Epitaxial Ni(111) films grown in situ on c-plane sapphire substrates were also used as substrates.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Thermal Laser Epitaxy of Carbon Films

Kim,

Smart,

Mannhart

et al. 2023

Crystal Growth & Design

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Synthesizing carbon films by thermal evaporation is challenging due to carbon's refractory nature, which entails extremely high evaporation temperatures (>2000 °C). This study investigates thermal laser epitaxy (TLE) as a technique for carbon film growth. We use TLE to grow carbon films on c-plane sapphire substrates in a wide range of substrate temperatures (20−1800 °C). These studies show that the crystallinity of carbon films can be controlled by the substrate temperature during growth, where amorphous and nanocrystalline carbon forms at lower and higher temperatures, respectively. Carbon films grown at high temperatures are electrically more conductive and have smaller activation energies of defect states. Furthermore, this study characterizes the dependence of the growth rate on the power of the sourceevaporating laser beam. In addition, it demonstrates in situ growth of carbon films on Ni(111) films on c-plane sapphire substrates. Our results reveal the effectiveness of TLE in synthesizing a broad spectrum of carbon films that range from films of amorphous carbon to nanocrystalline carbon.

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Section: ■ Experimental Sectionmentioning

confidence: 99%