Capacitive Modeling of Cylindrical Surrounding Double-Gate MOSFETs for Hybrid RF Applications

Abstract

The advancements in semiconductor technology greatly impact the growth of hybrid VLSI devices and components. The nanometer technology has been possibly executed due to the enhancement of the scaling factor of the MOSFETs. Since the MOSFETs play a vital role in building dense devices, it also has several research insights with various semiconductor materials with high-ƙ dielectrics. The high-ƙ dielectric material in the place of the conventional oxide layer in the MOSFET design results in improved performance by reducing the Short Channel Effects (SCEs). In this research work, an analytical model of the lightly doped Cylindrical Surrounding Double-Gate (DG) MOSFET has been proposed. The capacitance modeling has been done for this cylindrical structure. This modeling has been analyzed for all operating regions of the transistors, capacitance estimation, and electrical field dependence on the capacitance. The results have been compared with the results derived from previous research and tabulated. This novel model occupies less area on the board, and routing is more accessible than the conventional DG MOSFET design. The overall results have been following the agreement in terms of accuracy, area tradeoff, and high speed, making the novel model suitable for high-frequency/RF hybrid applications.

Design of Cylindrical Surrounding Double-Gate MOSFET With Fabrication Steps Using a Layer-by-Layer Approach

“…The halo doping concentration [6] of the dopants in the source and drain terminal has been given as:…”

“…where 'x' is the distance of the length of the CSDG MOSFET device. The resultant design is a cylindrical structure and this heterostructure will have a non-zero contribution to the Gaussian distribution and it is expressed as: The work has been an extension lead of the authors' effort in their 2D DG MOSFET in [6]. From fig.…”

“…The potential involved with the cylindrical structure has been affected by an imaginary capacitor and it is termed 'V'. This potential exists between the concentric layers of the cylindrical structure of the CSDG MOSFET [2][3][4][5][6]. The inner layer of the cylinder has a radius of rc 2 and the outer layer of the cylinder has a radius of rc 1 .…”

“…This enables the active gate driving to share gate pulse signal information [5]. Gowthaman and Srivastava [6] have realized an analytical model of the lightly doped Cylindrical Surrounding Double-Gate (CSDG) MOSFET. Capacitive modeling was performed for this cylindrical structure.…”

Sensitivity of Lightly and Heavily Dopped Cylindrical Surrounding Double-Gate (CSDG) MOSFET to Process Variation

“…There has been various ongoing research on CSDG MOSFETs. Gowthaman and Srivastava [14] have presented an analytical model of the lightly doped CSDG MOSFET for capacitive modeling using cylindrical coordinates. Rewari et al [15] have developed a numerical model for electric potential, subthreshold current, and subthreshold swing for Junction-Less Double Surrounding Gate (JLDSG) MOSFET using the superposition method.…”