2011
DOI: 10.1063/1.3574661
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Capacitive behavior of pentacene-based diodes: Quasistatic dielectric constant and dielectric strength

Abstract: HAL is a multidisciplinary open access archive for the deposit and dissemination of scientific research documents, whether they are published or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers. L'archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d'enseignement et de recherche français ou étrangers, des labora… Show more

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Cited by 103 publications
(79 citation statements)
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“…The fully screened dielectric constants are in excellent agreement with the measured values of ε. 4,18,26,27 For pentacene, ε full is also close to the values of 3.2 and 3.6, obtained by Sharifzadeh et al 3 from GW calculations within the random phase approximation (RPA). Indeed, the SCS method solves the RPA equation for a collection of QHOs in the dipole approximation.…”
mentioning
confidence: 62%
See 1 more Smart Citation
“…The fully screened dielectric constants are in excellent agreement with the measured values of ε. 4,18,26,27 For pentacene, ε full is also close to the values of 3.2 and 3.6, obtained by Sharifzadeh et al 3 from GW calculations within the random phase approximation (RPA). Indeed, the SCS method solves the RPA equation for a collection of QHOs in the dipole approximation.…”
mentioning
confidence: 62%
“…ε 18,27 experiments are less than 2% in lattice parameters and unit cell volumes. Similar agreement is also found for the internal molecular geometries, for which the PBE+vdW method predicts the C-C distances with an accuracy of 2% in comparison with x-ray measurements.…”
mentioning
confidence: 99%
“…[5][6][7] In the absence of a dedicated highly doped contact zone, the electrostatic infl uence of the contact built-in potential does not reduce to a socalled depletion region, but can spread throughout the whole organic semiconductor bulk; this aspect, together with a widely observed Fermi-level pinning, makes the charge-injection barrier a macroscopic bottleneck for current fl ow, which manifests itself as a signifi cant contact resistance ( R c ). [8][9][10][11] Organic fi lms are composed of molecules weakly bound to each other by van der Waals forces, which are in competition with molecule-substrate interactions.…”
Section: −3mentioning
confidence: 99%
“…[26][27][28] while those for the organic semiconductors rubrene, pentacene, and poly(3-hyxylthiophene) (P3HT) are 3.3-3.9, 2.6, and 4.4, respectively. [29][30][31] The derived value of ~5 lies between the two groups and possibly reflects the weaker ionic or stronger covalent character of CuSCN due to the -SCN constituent.…”
Section: Metal-insulator-semiconductor Capacitors Based On Cuscnmentioning
confidence: 99%